FQB7N60TM Discrete Semiconductor Products |
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Allicdata Part #: | FQB7N60TMTR-ND |
Manufacturer Part#: |
FQB7N60TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 7.4A D2PAK |
More Detail: | N-Channel 600V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Sur... |
DataSheet: | FQB7N60TM Datasheet/PDF |
Quantity: | 1000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.7A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1430pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.13W (Ta), 142W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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FQB7N60TM is a new type of Mosfet transistor manufactured by Fairchild Semiconductor. It is a single n-channel enhancement mode power field-effect transistor with low on-state resistance and fast switching time. This device is widely used in various application fields, such as power switching, DC/DC converter and display power supplies, and provides an excellent solution for the design of efficient, reliable and low-EMI power solutions.
The working principle of FQB7N60TM is based on the MOSFET, which stands for metal-oxide-semiconductor field effect transistor. It is a field-effect transistor (FET) with a gate oxide layer, allowing electrical signals to be applied to the gate that can control the flow of electrical current between the source and the drain. The current is controlled by the voltage on the gate and is called “current gain”. This means that when the gate voltage is increased, the current increases proportionally.
FQB7N60TM is a high density power Mosfet transistor which is available in TO-220 and TO-262 packages. It is based on the STripFET technology, providing good thermal resistance, low dynamic and static power losses, high power density and low EMI. In addition, this device has a large number of features, such as high current capability, high breakdown voltage, low on-resistance and fast switching speed. It is also suitable for operation at high temperatures (>175°C).
FQB7N60TM is suitable for applications in a wide range of fields, especially in consumer and industrial electronics applications, such as power switching, dc/dc converters, and display power supplies. It provides excellent switching performance and power efficiency, making it an ideal device for power solutions. Moreover, it is compliant with the RoHS standard, which makes it an environmentally friendly device.
In conclusion, FQB7N60TM is an excellent choice for many application fields, providing excellent power solutions and performance. Its nature allows it to be used in various types of designs. The high current capability and fast switching speed make it an ideal device for power electronics applications and for high temperature operation. Its RoHS compliance also makes it a good choice for environmentally friendly applications.
The specific data is subject to PDF, and the above content is for reference
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