FQB7N20TM

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.13W (Ta), 63W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	690 mOhm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.6A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction
The FQB7N20TM is a n-channel Enhancement-Mode Field Effect Transistor (FET). It is a single transistor device that is designed to provide a high level of performance in a variety of applications. It has a maximum operating temperature of 150 degrees Celsius and a Vds of 550 volts. This makes it suitable for use in high voltage and high temperature applications. The FQB7N20TM offers low on-resistance values and high breakdown voltage ratings that make it suitable for switching and power applications.
Application Fields
The FQB7N20TM is a versatile component that can be used in various applications. Some of the common applications that can benefit from the FQB7N20TM include power supplies, converters, motor drives, lighting and switching applications. It is also ideal for use in high-power applications such as inverters, automotive alternators and DC motors. In addition, the FQB7N20TM can be used for low voltage applications such as digital logic circuits and low voltage power supplies.Working Principle
The FQB7N20TM is a n-channel Enhancement-Mode Field Effect Transistor (FET). It is a single transistor device that operates on the principle of control of the transistor\'s current flow by a volt age level applied to its gate. In its most basic form, the FET consists of a source terminal, a drain terminal, and a gate terminal. The most typical configuration is a metal oxide semiconductor-type FET, with a gate oxide layer between the metal gate and the semiconductor channel. When a voltage is applied to the gate terminal, it creates an electric field that in turn forms a depletion region in the semiconductor channel, essentially reversing the transistor\'s conduction state. When the gate voltage is low, the FET is turned off and the current flow between the source and the drain is constrained. When the gate voltage is increased, the depletion region decreases and the current flow increases accordingly.Conclusion
The FQB7N20TM is an n-channel enhancement-mode field effect transistor (FET) that offers a wide range of performance and features. Its low on-resistance, high breakdown voltage, and maximum operating temperature and Vds ratings make it ideal for a variety of high voltage and high temperature applications, such as power supplies, converters, motor drives, and switching applications. In addition, the FQB7N20TM is easy to use and is widely available, making it one of the most cost effective solutions for many applications. The FET works on the principle of control of the transistor\'s current flow by a voltage level applied to the gate terminal to form a depletion region in the semiconductor channel and reverse the transistor\'s conduction state.

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