FQB7N65CTM Discrete Semiconductor Products

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The FQB7N65CTM is a N-channel Enhancement-mode trench-type power Field-Effect Transistor (FET) from the Fairchild Semiconductor company. This transistor is designed to provide customers with a device that has very low RDS(ON) and dV/dt capabilities, low gate-charge and high current handling capabilities, over a wide range of operating temperatures and conditions. This is accomplished by using its unique geometric design that leads to its high power performance.

The FQB7N65CTM is primarily used in applications that require high current switching capabilities. This makes it the ideal choice in a wide variety of power management applications, such as module power supplies, industrial motor drives, active filters, switching regulators, and power converters. Additionally, due to its fast switching time, it is also suitable for high-frequency switching applications. It may also be used in motor control, power factor correction and load control applications.

The FQB7N65CTM is designed to be able to switch currents up to 75A at 100V. It has an RDS(ON) of less than 4 mΩ at 25°C and a drain source breakdown voltage (BVDSS) of 100V. The RDS(ON) increases slightly with increasing junction temperature, but remains under 8 mΩ at a temperature of 125°C. It also has a low gate-source capacitance of 2 pF and a fast turn-on and turn-off response time of less than 1.0 μs. This makes it suitable for high-frequency switching applications.

The FQB7N65CTM features a very efficient working principle. The transistor is basically a three-terminal semiconductor device that is capable of controlling current flow between two of its terminals depending on the voltage applied to its gate. The FQB7N65CTM is an N-channel transistor, meaning that the conduction is enabled when the voltage applied to the gate is greater than the voltage applied to the other two terminals by a certain threshold voltage. This threshold voltage depends on the device type and is approximately 3V for the FQB7N65CTM. When the gate voltage is greater than the threshold voltage, the device conducts and allows current between the source and drain terminals. When the gate voltage is lower than the threshold voltage, the device becomes inoperative and does not allow current flow between the source and drain terminals.

The FQB7N65CTM has some unique characteristics, which make it suitable for a variety of applications in power management and high-frequency switching applications. It has a very low RDS(ON) value, allowing for efficient switching, and a low gate-charge, meaning that it can switch faster. It also has a fast turn-on and turn-off response time, making it suitable for high-frequency switching applications. Additionally, it is able to handle large currents and operate over a wide temperature range, making it a great choice in a variety of power management applications.

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