FQB7P20TM Discrete Semiconductor Products |
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Allicdata Part #: | FQB7P20TMTR-ND |
Manufacturer Part#: |
FQB7P20TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 7.3A D2PAK |
More Detail: | P-Channel 200V 7.3A (Tc) 3.13W (Ta), 90W (Tc) Surf... |
DataSheet: | FQB7P20TM Datasheet/PDF |
Quantity: | 800 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 3.65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A FQB7P20TM is a field-effect transistor (FET) that is used mainly in power electronics applications. It is a MOSFET (Metal Oxide Semiconductor FET) which is classified as a single FET. The FQB7P20TM is part of the larger B7 family of FETs.
The FQB7P20TM is widely used in a range of power electronics applications due to its excellent performance characteristics. It has a maximum drain current of 7A and a drain-source voltage (Vds) of 20V making it suitable for applications that require high power switching such as motor control and speed control systems. It also has a low on-resistance of 4mΩ and fast switching speeds making it ideal for power converters, and high efficiency switching applications. The FQB7P20TM is compatible with a range of DC and AC voltage sources, making it highly versatile.
The FQB7P20TM operates under the principle of a field-effect transistor (FET). In FETs, the current (Id) flowing through the channel between the drain and source terminals is controlled by the voltage applied to the gate electrode, not by the current in the gate circuit, as with a bipolar transistor. This enables a FET to be used as a voltage-controlled switch. The voltage applied to the gate of the FET generates an electric field in the channel, which in turn creates a channel between the source and drain, allowing the flow of current from drain to source. By controlling the voltage on the gate, the channel can be opened or closed, allowing for switching between the on and off states.
The FQB7P20TM is an excellent choice for many power electronics applications. It is highly versatile and capable of producing excellent performance characteristics. It combines low on-resistance with fast switching speeds, making it suitable for a range of applications. It is compatible with both DC and AC voltage sources, making it suitable for a range of applications in the power electronics industry. The FQB7P20TM is part of a larger family of FETs, making it well suited for applications requiring higher or lower ratings than this specific model.
The specific data is subject to PDF, and the above content is for reference
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