FQI27N25TU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQI27N25TU is a type of vertically double-diffused MOSFET (VDMOS) transistor, specifically a type of depletion mode VDMOS. The FQI27N25TU is a non-logic level device and is ideal for high voltage, low frequency applications. This transistor is also notable for high insulation and surge current capabilities, making it a great choice for many different applications.

The FQI27N25TU consists of a drain, a source and a gate. The drain and source are two ohmic contacts made of aluminum, connected by a highly resistive layer of silicon nitride that serves as a gate insulator with a thickness of roughly 3.2 nm. The interlayer of silicon nitride is essential, as it ensures the transistor remains conductive despite being subjected to voltages. The gate is connected to two ohmic contacts (also made of aluminum) and consists of a square Al(Al2O3) layer.

In order to understand the working principle of the FQI27N25TU, it is important to understand what the depletion mode MOSFET is. Depletion mode MOSFET means that the transistor is normally in an "off" state. As current flows through the drain-to-source channel, the voltage across the drain and source increases, and as a result, the voltage increases on the gate as well. This causes a depletion layer to form within the interlayer of silicon nitride, which reduces the drain-to-source current. As the gate voltage further increases, the depletion layer will grow in size and eventually block the current completely, turning the transistor off.

The FQI27N25TU can be used in several different applications, such as in high power switching, motor speed control, and power supply design. As mentioned before, the FQI27N25TU is notable for its high insulation and surge current capabilities. This makes it ideal for applications like in welding equipment, induction cooking equipment and AC module drives. The FQI27N25TU also has a very low on-resistance (RDS(on)) and is capable of working at low frequencies, making it suitable for low-frequency applications like LCD monitors and automotive power supplies.

In conclusion, the FQI27N25TU is a vertical double diffused metal oxide semiconductor (VDMOS) transistor and a type of depletion mode transistor. This type of transistor offers great advantages over many other types of MOSFETs, due to its high insulation and surge current capabilities. Furthermore, its low on-resistance and low frequency capabilities make it suitable for many different types of applications. All these features combined make the FQI27N25TU an ideal choice for many different types of applications.

The specific data is subject to PDF, and the above content is for reference