Allicdata Part #: | FQI2NA90TU-ND |
Manufacturer Part#: |
FQI2NA90TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 2.8A I2PAK |
More Detail: | N-Channel 900V 2.8A (Tc) 3.13W (Ta), 107W (Tc) Thr... |
DataSheet: | FQI2NA90TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 5.8 Ohm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI2NA90TU devices are a class of field-effect transistors (FETs) that are manufactured using a metal oxide semiconductor. They are in the family of laterally diffused metal oxide semiconductor (LDMOS) devices and are designed to be used in high-voltage, high-power applications. FQI2NA90TUs are commonly used in switching and amplifying circuits, as well as in radio-frequency (RF) circuits. This article examines the applications and working principle of FQI2NA90TU devices.
Overview of FQI2NA90TU Devices
FQI2NA90TU devices are power MOSFETs, which are transistors built by combining a metal oxide semiconductor (MOS) with a field-effect transistor (FET). These devices are commonly used in high-power and high-voltage applications, such as in acoustic transducers, power supplies, and telecommunications systems. Additionally, these devices typically feature low on-state resistance, making them ideal for low-loss applications. FQI2NA90TU devices have an integrated body-drain diode to provide protection against inductive back-emf, as well as the ability to dissipate large amounts of power without exceeding maximum operating temperature.
How FQI2NA90TU Devices Work
FQI2NA90TU devices are voltage-controlled switches that use the MOSFET principle to control and amplify currents. They work by having a source and drain terminal connected to a semiconductor substrate, such as a silicon wafer. The semiconductor substrate is then located between two electrodes, a source and a gate. When a voltage is applied to the gate electrode, it attracts electrons to the gate-drain region, which increases the conductivity between the source and drain electrodes. This makes it possible to control the current flow between the source and drain electrodes. The amount of current flowing through the device is determined by the amount of voltage applied to the gate electrode.
Applications of FQI2NA90TU Devices
FQI2NA90TU devices are used in a wide range of applications. They are commonly used in motor control circuits and audio amplifier circuits. Additionally, they are used in switching and amplifying circuits, as well as in radio-frequency circuits. Their low on-state resistance makes them ideal for low-loss applications, such as in cellular base stations, RF repeaters, and point-of-sale terminals. Additionally, they are well suited for high-power applications, such as in backlight inverters, display drivers, and power inverters.
Conclusion
FQI2NA90TU devices are a class of metal oxide semiconductor FETs that are used in high-voltage, high-power applications. They are commonly used in switching and amplifying circuits, as well as in radio-frequency circuits. These devices are used in a wide range of applications, including motor control circuits, audio amplifier circuits, cellular base stations, RF repeaters, and point-of-sale terminals. By understanding the applications and working principle of FQI2NA90TU devices, engineers are able to design more efficient and reliable circuits.
The specific data is subject to PDF, and the above content is for reference
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