FQI2P25TU

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FQI2P25TU is a field-effect power MOSFET (FET) device with a drain current rating of 25A. It is a type of transistor that utilizesElectrical conductivity in a channel between its source and drain terminals to control the current flow via an appliedgate-source voltage. It is a single MOSFET device, meaning that there is only one channel to control the current. The main application of this type of FET is in power electronics as it has a high current carrying capacity and a low drain to source on-resistance. It can be used in switching circuits through its ability to rapidly switch between high and low resistance states with minimal dissipation. The FQI2P25TU is suitable for applications such as computer power supplies and AC switching circuits.
The working principle of the FQI2P25TU is based on controlling the current flow by variation of an electric field. This is done by varying the voltage applied to the gate-source terminals. By varying this voltage, the electric field will control the current flow between the source and drain. When the voltage applied to the gate-source is increased, the electric field will increase and the FET will be in its “on” state, allowing current to flow. Conversely, if the voltage is decreased, the electric field will decrease and the device will be in its “off” state, preventing current from flowing. This ability to rapidly switch between states makes them ideal for use in switching circuits.
In summary, the FQI2P25TU is a single MOSFET device with a drain current rating of 25A. Its main application is in the field of power electronics due to its high current carrying capacity and low on-resistance. Its working principle is based on controlling the current flow by applying a voltage to its gate-source terminals, which controls the electric field in the channel between the source and drain, allowing it to rapidly switch between in “on” and “off” states. 

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