FQI2N90TU Allicdata Electronics
Allicdata Part #:

FQI2N90TU-ND

Manufacturer Part#:

FQI2N90TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 900V 2.2A I2PAK
More Detail: N-Channel 900V 2.2A (Tc) 3.13W (Ta), 85W (Tc) Thro...
DataSheet: FQI2N90TU datasheetFQI2N90TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQI2N90TU is a type of Field-Effect Transistor (FET) made by Fairchild and is commonly used for switching and/or amplifying electronic signals. A FET is a type of transistor that is characterized by its structure: an active area comprised of a single layer of charged carriers (also known as an "inversion layer") and two gate electrodes, one above the active area and one below it. The FQI2N90TU is a specific type of FET, called a MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. Unlike other types of FETs, such as a Junction Field-Effect Transistor (JFET) which rely on the physical contact of a wire to the gate for the transistor to be activated, MOSFETs use an electric field to achieve the same effect; specifically, a voltage applied to the gate electrode will create an electric field which will, in turn, affect the inversion layer of the active region, thus allowing or blocking the flow of electrons as appropriate.

In addition to its unique way of operation, the FQI2N90TU MOSFET has other advantages over other types of FETs. It has higher power handling capability (the ability to pass larger amounts of current through it), lower DC conduction, and a low "on" resistance. The low "on"-resistance of this transistor makes it an ideal choice for applications where efficiency and power savings are paramount, such as in switching power supplies, solar energy convertors, and LED drivers. The device can also be used where low-power consumption is desired, as in battery-powered applications.

The FQI2N90TU MOSFET is also very easy to use; its four pins are typically labeled Drain (D), Source (S), Gate (G), and Body-Diode (BD). To turn on the transistor, the user must apply a voltage to the Gate that is greater than the voltage at the Source. This causes the electric field to be pinched off and electrons are allowed to flow from the Drain to the Source. To turn off the transistor, the voltage to the Gate must be made lower than the voltage at the Source, thus preventing the flow of electrons.

The FQI2N90TU has a wide range of applications, including high speed switching circuits, motor control, linear regulators, power management circuits, power amplifiers, pulse generating circuits, and RF communication systems. It can also be used in digital logic circuits and has been used in a variety of consumer electronic products, such as gaming consoles, mobile phones, digital cameras, and electronic toys.

The FQI2N90TU is an ideal choice for many electronics applications due to its high power handling capability, low "on" resistance, and ease of use. It is a versatile device that can be used in a wide range of applications where power efficiency and fast response time are required. Furthermore, its relatively low cost makes it an attractive solution for many consumer applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQI2" Included word is 8
Part Number Manufacturer Price Quantity Description
FQI2P25TU ON Semicondu... -- 1000 MOSFET P-CH 250V 2.3A I2P...
FQI2N30TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 300V 2.1A I2P...
FQI2N80TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 800V 2.4A I2P...
FQI2N90TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 900V 2.2A I2P...
FQI27P06TU ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 27A I2PAK...
FQI2NA90TU ON Semicondu... 0.0 $ 1000 MOSFET N-CH 900V 2.8A I2P...
FQI27N25TU-F085 ON Semicondu... 2.79 $ 737 MOSFET N-CH 250V 25.5A I2...
FQI27N25TU ON Semicondu... 1.99 $ 940 MOSFET N-CH 250V 25.5A I2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics