Allicdata Part #: | FQI2N90TU-ND |
Manufacturer Part#: |
FQI2N90TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 2.2A I2PAK |
More Detail: | N-Channel 900V 2.2A (Tc) 3.13W (Ta), 85W (Tc) Thro... |
DataSheet: | FQI2N90TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 7.2 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI2N90TU is a type of Field-Effect Transistor (FET) made by Fairchild and is commonly used for switching and/or amplifying electronic signals. A FET is a type of transistor that is characterized by its structure: an active area comprised of a single layer of charged carriers (also known as an "inversion layer") and two gate electrodes, one above the active area and one below it. The FQI2N90TU is a specific type of FET, called a MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. Unlike other types of FETs, such as a Junction Field-Effect Transistor (JFET) which rely on the physical contact of a wire to the gate for the transistor to be activated, MOSFETs use an electric field to achieve the same effect; specifically, a voltage applied to the gate electrode will create an electric field which will, in turn, affect the inversion layer of the active region, thus allowing or blocking the flow of electrons as appropriate.
In addition to its unique way of operation, the FQI2N90TU MOSFET has other advantages over other types of FETs. It has higher power handling capability (the ability to pass larger amounts of current through it), lower DC conduction, and a low "on" resistance. The low "on"-resistance of this transistor makes it an ideal choice for applications where efficiency and power savings are paramount, such as in switching power supplies, solar energy convertors, and LED drivers. The device can also be used where low-power consumption is desired, as in battery-powered applications.
The FQI2N90TU MOSFET is also very easy to use; its four pins are typically labeled Drain (D), Source (S), Gate (G), and Body-Diode (BD). To turn on the transistor, the user must apply a voltage to the Gate that is greater than the voltage at the Source. This causes the electric field to be pinched off and electrons are allowed to flow from the Drain to the Source. To turn off the transistor, the voltage to the Gate must be made lower than the voltage at the Source, thus preventing the flow of electrons.
The FQI2N90TU has a wide range of applications, including high speed switching circuits, motor control, linear regulators, power management circuits, power amplifiers, pulse generating circuits, and RF communication systems. It can also be used in digital logic circuits and has been used in a variety of consumer electronic products, such as gaming consoles, mobile phones, digital cameras, and electronic toys.
The FQI2N90TU is an ideal choice for many electronics applications due to its high power handling capability, low "on" resistance, and ease of use. It is a versatile device that can be used in a wide range of applications where power efficiency and fast response time are required. Furthermore, its relatively low cost makes it an attractive solution for many consumer applications.
The specific data is subject to PDF, and the above content is for reference
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