Allicdata Part #: | FQI2N80TU-ND |
Manufacturer Part#: |
FQI2N80TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 2.4A I2PAK |
More Detail: | N-Channel 800V 2.4A (Tc) 3.13W (Ta), 85W (Tc) Thro... |
DataSheet: | FQI2N80TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 6.3 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQI2N80TU is a MOSFET (metal–oxide–semiconductor field-effect transistor) that is part of the larger family of FET transistors. It is categorized as a single FET transistor and is used in a number of different applications.
A MOSFET is an electrical device that has three terminals named source (S), gate (G), and drain (D). It acts as an insulated gate in that it allows a voltage difference to fluxute between the source and the drain, thus regulating the current flow. The current flow can be controlled by a range of various voltages. In this way, it is seen to be one of the most versatile tools in the cosmos of electronics.
The FQI2N80TU is a very powerful MOSFET with a low on-state resistance. This makes it ideal for applications where high power with minimal heat dissipation is desired. For example, the FQI2N80TU can be used as a replacement for heavy relays or other power switching devices in circuit boards and automotive applications. Additionally, it can be used to provide current control in high-speed switching operations.
The FQI2N80TU is also a very robust transistor. Not only does it offer a wide operating temperature range and high power efficiency, but its strong construction also makes it resistant to short circuit current. This makes it well suited for high current applications in industrial, medical, and military applications.
The FQI2N80TU is also a very economical MOSFET. As such, it can be used in a variety of applications from low-cost consumer electronics and portable devices to demanding industrial and automotive applications. Thanks to its low switching and on-state resistance values, it is also the perfect solution for cost-sensitive applications.
The FQI2N80TU works by allowing the voltage of the drain to rise and fall depending on the voltage of the gate. This creates a controlled electric field that allows current to flow. This process is known as the depletion-layer mechanism and it is what makes the FQI2N80TU such a powerful and versatile tool.
The FQI2N80TU is an incredibly useful tool that can be used in a variety of applications. Its versatility and low cost make it a great choice for noise-sensitive high-power applications and robust low-power solutions. Its robustness and resistance to short-circuits make it ideal for industrial and military environments. Its low switching and on-state resistance values make it the perfect solution for cost-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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