Allicdata Part #: | FQI2N30TU-ND |
Manufacturer Part#: |
FQI2N30TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 2.1A I2PAK |
More Detail: | N-Channel 300V 2.1A (Tc) 3.13W (Ta), 40W (Tc) Thro... |
DataSheet: | FQI2N30TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 130pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.7 Ohm @ 1.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI2N30TU is a type of electrical components. According to its category, it is a type of field-effect transistors (FETs) and more specifically a single, or simple, type of MOSFET transistor. It is made up of three terminals: one source terminal, one gate terminal, and one drain terminal. FQI2N30TU transistors are often used in analog circuit designs to amplify and switch signals. They have low power dissipation, low noise, and a high input impedance. Their working principle is based on capacitance.
The working principle of FQI2N30TU MOSFET transistors relies on what is known as the “MOS capacitor.“ When the gate terminal is left unconnected, an accumulation of electrons at the gate junction produces an electric field. This electric field reacts with the thin insulating layer that separates the gate from the channel of the transistor, reducing the number of electrons present. When a potential is applied to the gate terminal, this electric field is modified, allowing for a controlled flow of electrons or holes — depending on the type of MOSFET — through the transistor channel and between the source and drain terminals. This controlled flow of electricity between the source and drain terminals is what allows for amplification and switching.
FQI2N30TU MOSFET transistors find many applications in the electronics industry. They are used in amplifiers, in power supplies, and in audio equipment. They are also used in alarms, motors, computers, and other digital and analog machines. Further, FQI2N30TU transistors are often employed in high power applications such as radio transmitters and high power amplifiers. One of the strengths of these transistors is that they are relatively small, allowing for efficient and low-cost circuits.
FQI2N30TU transistors can be used for both analog and digital designs. When used in an analog circuit, the transistor acts as an amplifier; in a digital circuit, it functions as a switch. In both cases, the working principle is the same: the MOS capacitor allows for electrons or holes to flow through the transistor channel, which establishes a connection between the source and drain terminals. The level of voltage applied to the gate terminal determines the amount of current that can flow through the transistor.
In conclusion, FQI2N30TU transistors are single-type MOSFET transistors with three terminals — source, gate, and drain. Their working principle is based on the MOS capacitor, which allows for a controlled flow of electrons or holes through the transistor channel. They are suitable for both analog and digital designs, often used in power supplies, amplifiers, and motors. FQI2N30TU are also a popular choice for high power applications such as radio transmitters and high power amplifiers.
The specific data is subject to PDF, and the above content is for reference
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