Allicdata Part #: | FQI27P06TU-ND |
Manufacturer Part#: |
FQI27P06TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 27A I2PAK |
More Detail: | P-Channel 60V 27A (Tc) 3.75W (Ta), 120W (Tc) Throu... |
DataSheet: | FQI27P06TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI27P06TU is a field effect transistor (FET) which is commonly used in integrated circuits (ICs) and low voltage switching applications. It is a single, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with high linearity and low gate-source capacitance.
FQI27P06TU transistors are widely used in consumer electronics and automotive sectors due to their high-frequency response, low-distortion and low power consumption. Additionally, they are used in the audio industry for amplifier and pre-amplifier purposes.
Moreover, FQI27P06TU transistors have been designed to reduce the effect of parasitic capacitance between the gate and drain (or source) terminals, which makes them ideal for low-voltage switching applications. This also helps ensure fast switching and low power consumption.
The working principle of FQI27P06TU transistor is based on the principle of a Field Effect Transistor (FET). When a gate voltage is applied to the gate terminal, an electric field is created between the source and the drain terminals. This electric field causes electrons or holes to flow between the source and the drain (or "gate to drain") terminals, creating a current.
When a voltage is applied to the drain terminal, current will flow through the transistor. The voltage at the gate must be greater than the voltage at the drain in order for current to flow. This is because of the concept of "bias." If the voltage at the gate is less than the voltage at the drain, then the transistor is said to be in "reverse bias" and no current will flow.
In addition, the higher the voltage applied to the gate, the more current is allowed to flow through the transistor. This is because the electric field at the gate increases in size resulting in more holes or electrons being able to pass from the source to the drain.
The FQI27P06TU transistor is used in a variety of low voltage switching applications due to its low capacitance and fast switching. It is designed to have low power consumption and low distortion in order to be suitable for audio applications. As a result, it is widely used in consumer electronics and automotive sectors.
The specific data is subject to PDF, and the above content is for reference
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