GKI03080 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1030pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	16.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.2 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The GKI03080 is a type of field-effect transistor (FET) consisting of a single MOSFET (metal-oxide-semiconductor field-effect transistor), which is capable of handling higher current than other types of FETs such as JFETs (junction FETs). An FET operates on the principle of voltage-controlled current, whereby applying a voltage to the gate terminal controls the flow of current through the channel. As such, they are very popular in power circuits due to their ability to handle large currents.The GKI03080 FET has a low gate threshold voltage and a high current rating, so it is ideal for use in applications where power switching is required. It is widely used in automotive, computer, and industrial applications, and can be found in electronic controllers and power equipment. For example, it is the main switching element of the boost converter, a widely used power supply in the automotive and industrial market. Furthermore, it is also used in power amplifiers and DC-DC converters.The key parameters of the GKI03080 that make it suitable for power switching applications are its high current rating, low gate threshold voltage, and its low on-resistance. Its gate threshold voltage is typically around 5V, so it can be driven by a relatively low voltage source. It has a current rating of up to 20A, which means that it can handle a substantial amount of power. Furthermore, its low on-resistance (typically around 1Ω) allows it to switch power very efficiently.As for its working principle, when a voltage is applied to the gate of the FET, it creates an electric field between the gate and the source of the FET, which in turn modulates the flow of current through the channel. This modulation of current is what allows the FET to switch power. When the FET is in the on state, the current can flow freely through the channel, and when the FET is in the off state, the current is blocked by the FET’s gate-source junction. As such, the GKI03080 can be used to easily switch power on and off.The GKI03080 is a versatile and durable FET that is suitable for a wide range of applications. Its low gate threshold voltage, high current rating, and low on-resistance make it ideal for power switching applications. Furthermore, its easy to understand working principle allows it to be used in a wide range of applications, from automotive and computer to industrial applications. As such, it is a great choice for anyone looking for an efficient and reliable FET for their power switching needs.

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