GKI06185 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 350µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 46W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1510pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23.7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	15 mOhm @ 15.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The GKI06185 is a field effect transistor, more commonly known as an FET. It is a single transistor, and it is specifically designed to be used as a voltage controlled resistor in a wide variety of applications. The GKI06185 is a Mosfet, which is an acronym for metal-oxide-semiconductor field effect transistor. This type of transistor is designed to effectively control the flow of electrons between the source and the drain of the device.The GKI06185 is designed to operate in a wide range of voltage ranges, from 5 to 18 volts. The device is rated to handle a maximum current of 2 amps and a maximum power of 40 watts. It is specifically designed to be used in high frequency circuits, with a frequency range of 0.1MHz to 100 MHz. This transistor also has a breakdown voltage of 25 volts, which makes it very useful in higher voltage applications.The GKI06185 is configured in an N-channel configuration, meaning that electrons can flow from the drain to the source, but not from the source to the drain. This transistor utilizes the highest quality oxide layers available to ensure reliable performance for many years. It also has a low on-resistance rating of only 0.5 ohms, allowing for remarkably low voltage drops across the device.The primary purpose of the GKI06185 is to serve as a voltage controlled resistor. It works by controlling the amount of current that is allowed to flow through the device. This is accomplished by adjusting the voltage applied to the gate of the transistor. The higher the voltage applied, the higher the current flowing through the device. This principle can be used to regulate the flow of electricity in a variety of applications, ranging from current limiting to sample-and-hold circuits.In summary, the GKI06185 is a single Mosfet designed for use as a voltage controlled resistor. It has a low on-resistance rating and a wide range of operating voltages, making it useful for high frequency and high voltage applications. It utilizes high-quality oxide layers to ensure reliable operation. This versatile device can be used in a wide range of applications, from current limiting to sample-and-hold circuits.

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