GKI06259 Discrete Semiconductor Products |
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| Allicdata Part #: | GKI06259TR-ND |
| Manufacturer Part#: |
GKI06259 |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | MOSFET N-CH 60V 6A 8DFN |
| More Detail: | N-Channel 60V 6A (Ta) 3.1W (Ta), 40W (Tc) Surface ... |
| DataSheet: |  GKI06259 Datasheet/PDF |
| Quantity: | 1000 |
| 15000 +: | $ 0.14128 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 12.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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GKI06259 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is categorized as a single transistor. It is manufactured by General Instrument Corporation, and is rated for a voltage of up to 60 volts and a maximum current of 8.5 amperes. The GKI06259 is also a silicon-based transistor, which means that it is well-suited for use in high-frequency and high-power applications.The primary benefit of the GKI06259 is its small size, which allows it to fit in a relatively small package. This makes it an ideal choice for applications that require a high degree of power efficiency or where space is at a premium. Additionally, the GKI06259 has a low threshold voltage, which allows it to be used at a lower voltage without compromising performance. This can also reduce the amount of voltage and power required by the circuit, which can further increase the overall power efficiency.The MOSFET is operated using a gate-source voltage, which is applied between the gate, or control terminal, and the source, or input terminal, of the device. When a gate-source voltage is applied, it creates an electrostatic field around the gate channel, which causes a channel of electrons, known as an inversion layer, to form beneath the gate. The conductivity of this inversion layer is then controlled by the gate voltage, which allows the transistor to act as a switch or amplifier, depending on the intended application.The GKI06259 also features a self-protected substrate, which helps to reduce the risk of device failure due to overheating. The substrate acts as a thermal shield, which prevents excess heat generated by the device from damaging the substrate and other components in the circuit. Additionally, the body of the device is designed to be lightweight and provide good thermal conductivity, which helps to quickly dissipate any heat that is generated.Finally, the GKI06259 also has an integrated ESD protection circuit, which helps to protect the device from damage caused by electrostatic discharge (ESD). This ensures that the device remains functional even when exposed to an electrical or magnetic field, which can be generated by a variety of sources, such as static electricity or lightning.Overall, the GKI06259 is an excellent choice for a wide range of applications, such as power conversion, consumer electronics, and automotive applications. It offers a high level of power efficiency, a low threshold voltage, and a self-protected substrate, making it an ideal choice for environments where space and power are at a premium. Additionally, its integrated ESD protection circuit helps to keep the device functioning even when exposed to a variety of potentially damaging electrical fields, making it a great choice for sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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