
GKI06109 Discrete Semiconductor Products |
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Allicdata Part #: | GKI06109TR-ND |
Manufacturer Part#: |
GKI06109 |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 60V 9A 8DFN |
More Detail: | N-Channel 60V 9A (Ta) 3.1W (Ta), 59W (Tc) Surface ... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.21663 |
Vgs(th) (Max) @ Id: | 2.5V @ 650µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 59W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 23.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The GKI06109 transistor is a power metal-oxide-semiconductor field-effect transistor (MOSFET). The GKI06109 is a voltage-controlled device specially designed for lower-power and lighter load applications. It utilizes a tiny packaged MOSFET in a single package to reduce the size and complexity of the circuit.
MOSFETs have grown rapidly in popularity over the past several decades of semiconductor development because they are low power, have low distortion, have high switching speed, and are easy to integrate into circuits. Therefore they are often used in switched-mode power supplies, power converters, and circuit controllers.
MOSFETs are used because they are able to handle very large power levels due to their efficient design. They can also handle very high currents because of the low input capacity. The most basic types of MOSFETs are single-gate FETs, which are well-suited for both low-power and higher current applications.
Single-gate FETs operate by using the electric field between two metal plates, which are connected to the two drain electrodes of the device. The metal plates act as a gate, controlling the transfer of charge between the two drain terminals. When the metal plates are charged with a certain amount of electricity, a voltage between the two metal plates is developed, which enables charge to flow from one drain terminal to another.
The GKI06109 is a single-gate FET. It is based on an advanced trench MOSFET technology, which allows low on-resistance and fast switching characteristics. Additionally, the single-gate FET has a parasitic capacitance, which increases the switching speed by providing additional charge. When the gate of the device is held at a certain voltage, the parasitic capacitance is used to charge the gate faster and thus increase the switching speed.
The GKI06109 is designed to be used in low power applications such as automotive electronics, home entertainment systems, and cell phone amplifiers. It is also well-suited for use in microprocessor-controlled power supplies, switching regulators, motor control applications, and other general-purpose designs. It is able to handle very high currents due to its low gate charge and high switching speed, thus making it ideal for these types of applications.
In summary, the GKI06109 is a single-gate FET. It is based on trench MOSFET technology and is designed for low power and light load applications. It has a low on-resistance and fast switching speed, making it well-suited for applications such as those mentioned above. Its small size makes it easy to integrate into circuits and offers improved performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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