GKI07113 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The Gallium Nitride FET (GKI07113) is a unique type of transistor fabricated using gallium nitride (GaN) as the semiconductor material. GaN is the third-generation semiconductor material that offers higher power density, superior power efficiency, and improved thermal management capabilities relative to lower-generation technologies. The GKI07113 is single FET and is designed for use in high power applications such as power amplifiers, radio frequency (RF) converters, and high-voltage switching systems. This article will provide an overview of the GKI07113 application field, working principle, and features.

Application Field

The GKI07113 is an excellent choice for applications that require high power efficiency and superior thermal management. Examples of such applications include automotive, industrial & consumer electronics, power supplies, and power amplifiers. Additionally, the GKI07113 can be used in high-voltage switching systems, RF converters, and power amplifiers. It is also a popular choice for high-end consumer electronics, such as cell phones and tablets, due to its superior power efficiency.

Working Principle

At the heart of the GKI07113 is a single FET. A FET is a three terminal electronic component that acts as a variable resistor and can be switched on or off in order to regulate or control the flow of current between two terminals. The GKI07113 uses a GaN based FET that has a significantly higher breakdown voltage and improved power efficiency than traditional silicon FETs. This makes it ideal for high voltage, high current applications.

When the GKI07113 is turned on, electrons are drawn from the source terminal and moved through the channel to the drain terminal. This causes a current flow in the device and enables the GKI07113 to act as a switch. By controlling the voltage applied across the gate and source terminals, the GKI07113 can be switched on and off, allowing for the control and regulation of current in a circuit.

Features

The GKI07113 has several features that make it an excellent choice for high-power applications. It has a significantly higher breakdown voltage than traditional silicon FETs and a lower on-resistance (RDS(on)), meaning it can operate at higher currents and deliver higher power densities and efficiencies. The GKI07113 also has an improved thermal performance, allowing it to safely handle higher power levels without overheating. Additionally, the GKI07113 is extremely reliable and is available in a variety of package sizes.

In conclusion, the GKI07113 is a single FET designed for high-power applications, such as power amplifiers, RF converters, and high-voltage switching systems. It combines superior power efficiency and improved thermal management with an extremely reliable design. Additionally, the GKI07113 offers a significantly higher breakdown voltage than traditional silicon FETs, allowing it to reliably handle higher power levels without overheating. The GKI07113 is an excellent choice for any application that requires high power efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference