GKI04101 Discrete Semiconductor Products |
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Allicdata Part #: | GKI04101TR-ND |
Manufacturer Part#: |
GKI04101 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 40V 9A 8DFN |
More Detail: | N-Channel 40V 9A (Ta) 3.1W (Ta), 40W (Tc) Surface ... |
DataSheet: | GKI04101 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.14128 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 990pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.3 mOhm @ 18.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The GKI04101 is a silicon, nominally N-Channel Enhancement mode Power MOSFET manufactured by Torex Semiconductor, Ltd. It is designed for switching and power supply circuits, and focused on low conduction and switching losses, to increase the efficiency of power supply systems.
The GKI04101 is part of the “Single-Mode Gate drive” series of power MOSFETs. It uses nanocrystals and a novel fabrication process to achieve low conduction and switching losses. Moreover, it features a low gate threshold voltage and a wide operational temperature range. The combination of these features makes it an ideal solution for switching and power supply applications.
The GKI04101 is housed in a highly integrated chip package, measuring 4x4x2mm, and features a low drain-source on-resistance (RDS(on)). This low resistance minimizes the loss of power during switching, resulting in increased efficiency.
The GKI04101 is a N-channel device, meaning that it has the ability to control a current flow between its drain and source in one single direction. The device has three terminals: gate, source, and drain. When the gate voltage is less than the threshold voltage, the device is turned off and no current flows. When a positive voltage is applied to the gate terminal, the current flowing between the drain and the source terminals is increased.
The operation of the GKI04101 can be best understood by looking at its circuit diagram. The circuit diagram consists of an N-channel MOSFET, a load resistor, and a power supply. The source terminal of the MOSFET is connected to ground, while the load resistor is connected between the drain terminal and the power supply. When the gate voltage is less than the threshold voltage, no current will flow. However, when a positive voltage is applied to the gate, a current will start to flow between the drain and source terminals, causing a voltage drop across the load resistor. This voltage drop is the control signal that is used to activate the MOSFET.
The GKI04101 is a versatile device that can be used in a wide range of applications. It is commonly used as a power switch in circuits that require fast switching times and low conduction losses. It can also be used for high-frequency circuits, as well as for circuits with high inrush current. Additionally, the device can be used in robotics and automation, as well as in telecommunications and medical applications.
Overall, the GKI04101 is a high-performance power MOSFET suited for switching and power supply applications. It features a low gate threshold voltage and a wide operational temperature range, and its use of nanocrystals and a novel fabrication process enable low conduction and switching losses. It is also highly integrated, and can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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