IKD03N60RF Discrete Semiconductor Products |
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Allicdata Part #: | IKD03N60RFCT-ND |
Manufacturer Part#: |
IKD03N60RF |
Price: | $ 0.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 5A 53.6W TO252-3 |
More Detail: | IGBT Trench 600V 5A 53.6W Surface Mount PG-TO252-3 |
DataSheet: | IKD03N60RF Datasheet/PDF |
Quantity: | 2299 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 0.85680 |
10 +: | $ 0.76482 |
100 +: | $ 0.59630 |
500 +: | $ 0.49258 |
1000 +: | $ 0.38888 |
Series: | TrenchStop® |
Packaging: | Cut Tape (CT) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 5A |
Current - Collector Pulsed (Icm): | 7.5A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 2.5A |
Power - Max: | 53.6W |
Switching Energy: | 90µJ |
Input Type: | Standard |
Gate Charge: | 17.1nC |
Td (on/off) @ 25°C: | 10ns/128ns |
Test Condition: | 400V, 2.5A, 68 Ohm, 15V |
Reverse Recovery Time (trr): | 31ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Base Part Number: | *KD03N60 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Ikd03n60rf is a type of Insulated Gate Bipolar Transistor (IGBT) which belongs to the Single category. It is a power semiconductor device which is primarily used in a wide range of applications. The device is unique in the way that it combines the properties of both MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and bipolar transistor making it suitable for switching applications, motor drives, power supplies and other power electronic applications.
The working principle of the Ikd03n60rf device is based on its design. It consists of an insulated gate that is connected to a substrate of P-type material. A bipolar transistor is then constructed with an emitter, collector and a base and is connected to the gate of the IGBT. When a voltage is applied across the gate and the emitter, it creates a voltage drop across the collector and base, which in turn controls the current flow between the collector and the emitter. This makes it a unique and efficient device for switching applications. The Ikd03n60rf is also capable of handling inputs ranging from low as 3V to high as 1000V, making it suitable for a wide range of power electronic applications.
The Ikd03n60rf device is suitable for a wide range of applications. These include motor drives, power supplies, UPS systems, solar inverters, LED lighting, industrial motor control and more. It offers high efficiency and low heat generation as compared to other semiconductor devices. It also has a high switching speed and offers great gate control. This makes it an ideal choice for a wide range of applications.
In conclusion, the Ikd03n60rf is a type of Insulated Gate Bipolar Transistor (IGBT) which belongs to the Single category. It is a power semiconductor device which is primarily used in a wide range of applications. The device is unique in the way that it combines the properties of both MOSFET and bipolar transistor making it suitable for switching applications, motor drives, power supplies and other power electronic applications. It offers high efficiency, low heat generation and great gate control, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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