IKD03N60RFATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKD03N60RFATMA1CT-ND |
Manufacturer Part#: |
IKD03N60RFATMA1 |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 6.5A TO252-3 |
More Detail: | IGBT Trench Field Stop 600V 6.5A 53.6W Surface Mou... |
DataSheet: | IKD03N60RFATMA1 Datasheet/PDF |
Quantity: | 2460 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 0.71190 |
10 +: | $ 0.63945 |
100 +: | $ 0.49833 |
500 +: | $ 0.41167 |
1000 +: | $ 0.32500 |
Series: | TrenchStop™ |
Packaging: | Cut Tape (CT) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 6.5A |
Current - Collector Pulsed (Icm): | 7.5A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 2.5A |
Power - Max: | 53.6W |
Switching Energy: | 50µJ (on), 40µJ (off) |
Input Type: | Standard |
Gate Charge: | 17.1nC |
Td (on/off) @ 25°C: | 10ns/128ns |
Test Condition: | 400V, 2.5A, 68 Ohm, 15V |
Reverse Recovery Time (trr): | 31ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKD03N60RFATMA1 is a state-of-the-art insulated gate bipolar transistor (IGBT). It is an electronic component used in various types of electronic devices and circuits. It is part of the single IGBTs family, and has a variety of applications and working principles.
The IKD03N60RFATMA1 offers very low on-resistance and reduces the need for large heat sinks and snubber networks to manage losses, increasing reliability and cutting down on weight. This IGBT also has a wide operating temperature range, making it suitable for a variety of applications.
This IGBT is ideal for use in applications requiring high-frequency switching, such as motor drives, AC/DC converters, and ups systems. It also works well for lighting control systems, uninterruptible power supplies, and DC/DC converters. Furthermore, the IKD03N60RFATMA1 can be used in high-voltage, low-power applications, such as switch-mode AC/DC power supplies and solar inverters. The low gate-drive power makes it the perfect choice for portable and battery-powered electronics.
To work properly, the IKD03N60RFATMA1 needs a certain amount of gate current. This gate current is often supplied by a gate driver circuit, which acts as a voltage-to-current converter. The resistor in this circuit must be able to provide enough current to turn on the device. The proper current is determined by the device’s datasheet.
The IKD03N60RFATMA1’s working principle is based on the principle of insulated gate bipolar transistors. It is essentially a combination of an n-channel enhancement-mode power MOSFET and a p-channel enhancement-mode power MOSFET. The n- and p-channel transistors are connected in series, with the p-channel MOSFET acting as a gate for the n-channel MOSFET. This arrangement allows the device to control high current levels with a low gate current. When the gate on the p-channel MOSFET is driven with a high voltage, the n-channel MOSFET is enabled and it passes the current through itself. When the gate is driven with a low voltage, the device is disabled and there is no current flow.
The IKD03N60RFATMA1 is an important component in many electronic devices due to its wide range of applications and its versatility. It is capable of controlling high currents and is able to handle a large range of temperatures. Furthermore, its low gate-drive power makes it suitable for portable and battery-powered electronics. As such, it is an essential component in a wide range of applications, from motor drives to lighting control systems and uninterruptible power supplies.
The specific data is subject to PDF, and the above content is for reference
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