IKD06N60RAATMA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IKD06N60RAATMA1 transistor is a commercially available, silicon-based carbon-doped N-channel insulated gate bipolar transistor (IGBT). This device is manufactured using high-voltage-resistance, gated field-effect transistor (FET) technology and is generally used for lower inductance, low-side drive applications.

An IKD06N60RAATMA1 transistor is an excellent choice for use in applications requiring a voltage of up to 600V and a non-negative gate current of up to 3A. It has a package size of 5.0mm x 6.5mm, a junction temperature range of -40°C to +125°C, and features a maximum collector emitter voltage (VCE) of 600V, a collector current of 6A and a total power dissipation of 62W.

The working principle behind IKD06N60RAATMA1 transistors is relatively simple. When a positive voltage is applied to the gate, electrons in the N-channel are attracted towards the gate, creating a conducting channel. This allows electric current to flow between collector and emitter. By increasing or decreasing the positive voltage applied to the gate, the flow of current can be changed depending on the desired outcome.

The IKD06N60RAATMA1 transistor has a wide range of applications, including use in switching power supplies, battery charging and most common unregulated DC to DC converters. It is also suitable for use in high power automotive and industrial applications such as motor control, HVAC and lighting control. In addition, this transistor can be used for DC choppers, solenoid and relay drivers, as well as drive Thyristors and other power electronic devices.

The IKD06N60RAATMA1 is a useful and versatile device that is generally used for applications requiring current ratings up to 6A, low gate current requirements and superior efficiency. The device has a wide range of applications and features excellent on-state characteristics, low gate voltage, low gate current, soft switching, and effective EMI control.

The specific data is subject to PDF, and the above content is for reference