IKD04N60RF Discrete Semiconductor Products

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The IKD04N60RF is a N-channel MOSFET that is able to switch 10 A at 600 V. It has superior dv/dt capability, excellent avalanche ruggedness, fast switching times and very low on resistance. The IKD04N60RF is a popular choice for applications such as power supplies, motor control, battery management, RF switching, industrial control, and automotive inverters. It is a part of Infineon’s OptiMOS™ family of high efficiency MOSFETs.

The heart of the transistor is the MOSFET structure. This structure is composed of a source and a drain, connected by a channel. A voltage applied to the gate controls the resistance between the source and drain. When the voltage applied to the gate is below the threshold voltage, current does not flow through the channel and the MOSFET is said to be in the off-state. When the voltage applied to the gate is above the threshold voltage, current flows through the channel and the MOSFET is in the on-state.

The IKD04N60RF is a high voltage (600 V), high frequency (7 MHz) device. Its low on-resistance (55 mohm at 10V) makes it suitable for high power switching applications. Its superior dv/dt capability makes it very fast in responding to load changes and its excellent avalanche ruggedness make it more reliable in demanding applications.

The IKD04N60RF can be used for various applications such as AC-DC and DC-DC converters, motor control and battery management in various forms of industrial control, power supplies, RF switches, automotive inverters, and lighting control. It is capable of switching 10 A at 600 V. It has superior dv/dt capability, excellent avalanche ruggedness, fast switching times, and very low on resistance. The IKD04N60RF is an optimal choice for demanding applications that require reliable operation and high power switching.

The IKD04N60RF is a single IGBT transistor and is designed to be used in applications such as AC-DC and DC-DC converters, motor control and battery management. It is capable of switching 10 A at 600 V and has superior dv/dt capability, excellent avalanche ruggedness, fast switching times and very low on resistance. The IKD04N60RF is a great choice for applications such as power supplies, motor control, battery management, RF switching, industrial control, and automotive inverters.

The IKD04N60RF is a high voltage (600 V), high frequency (7 MHz) device. Its low on-resistance (55 mohm at 10V) makes it suitable for high power switching applications. Its superior dv/dt capability makes it very fast in responding to load changes and its excellent avalanche ruggedness make it more reliable in demanding applications. It is a great choice for applications such as power supplies, motor control, battery management, RF switching, industrial control, and automotive inverters.

In conclusion, the IKD04N60RF is a single IGBT transistor that is capable of switching 10 A at 600 V. It has superior dv/dt capability, excellent avalanche ruggedness, fast switching times and very low on resistance. It is an optimal choice for demanding applications that require reliable operation and high power switching. It can be used for various applications such as AC-DC and DC-DC converters, motor control and battery management in various forms of industrial control, power supplies, RF switches, automotive inverters, and lighting control.

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