IKD06N60RATMA1 Allicdata Electronics

IKD06N60RATMA1 Discrete Semiconductor Products

Allicdata Part #:

IKD06N60RATMA1TR-ND

Manufacturer Part#:

IKD06N60RATMA1

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 12A TO252-3
More Detail: IGBT Trench Field Stop 600V 12A 100W Surface Mount...
DataSheet: IKD06N60RATMA1 datasheetIKD06N60RATMA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2500 +: $ 0.36544
5000 +: $ 0.34804
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Series: TrenchStop™
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Power - Max: 100W
Switching Energy: 110µJ (on), 220µJ (off)
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: 12ns/127ns
Test Condition: 400V, 6A, 23 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Description

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The IKD06N60RATMA1 is a single insulated gate bipolar transistor (IGBT). This IGBT is a robust, highly reliable insulated gate bipolar transistor manufactured for high power applications. The IKD06N60RATMA1 can handle 600 volts with a wide operating temperature range of -70 degrees Celsius to +175 degrees Celsius. It is a low-loss device with a maximum junction temperature of 175 degrees Celsius. The IKD06N60RATMA1 has an average on state Rds (on) of 11.4 milliohms.

The application field of the IKD06N60RATMA1 is quite diverse, and mainly related to its 600V voltage, as this enables it to be used in different scenarios. For example, it is suitable for motor drives, welding system, solar inverters, AC/DC converters, uninterruptible power supplies, and even rectifier circuits.

The working principle of the IKD06N60RATMA1 is based on a self-closed circuit, where it acts as an electronic switch that uses an insulated gate that can be modulated to open or close the gate. This insulated gate has two voltage polarities available: one is used to turn the IGBT on and the other one is used to turn it off. As an ideal switch, it allows the circuit to be changed very quickly in order to limit the conduction losses.

When the gate voltage is high enough, the gate and collector leads will reduce their resistance and allow the current to flow and the IGBT will turn on. On the other hand, when the gate voltage is low enough, the IGBT will be turned off and no current will flow. This principle is the reason why the IGBT can handle high currents and voltages.

For the IKD06N60RATMA1, the gate voltage required to turn it on is 10V maximum, and 4 volts minimum. Furthermore, during the on state, the maximum gate current is 40mA. On the other hand, the off-state current is 1 milliamp maximum and the maximum continuous drain current is 60A.

In conclusion, the IKD06N60RATMA1 is a single IGBT with a wide range of applications and a simple working principle. This makes it ideal for many applications that require high power and low losses. Furthermore, it has a remarkable maximum junction temperature and is designed to handle high voltages and currents.

The specific data is subject to PDF, and the above content is for reference

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