IKD04N60RAATMA1 Discrete Semiconductor Products |
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| Allicdata Part #: | IKD04N60RAATMA1-ND |
| Manufacturer Part#: |
IKD04N60RAATMA1 |
| Price: | $ 0.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT TRENCH 600V 8A TO252-3 |
| More Detail: | IGBT Trench 600V 8A 75W Surface Mount PG-TO252-3 |
| DataSheet: |  IKD04N60RAATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 2500 +: | $ 0.37396 |
Specifications
| Power - Max: | 75W |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Reverse Recovery Time (trr): | 43ns |
| Test Condition: | 400V, 4A, 43 Ohm, 15V |
| Td (on/off) @ 25°C: | 14ns/146ns |
| Gate Charge: | 27nC |
| Input Type: | Standard |
| Switching Energy: | 90µJ (on), 150µJ (off) |
| Series: | TrenchStop™ |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 4A |
| Current - Collector Pulsed (Icm): | 12A |
| Current - Collector (Ic) (Max): | 8A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | Trench |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Not For New Designs |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
Description
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The IKD04N60RAATMA1 is a single IGBT transistor, which is widely used in various applications. It is an insulated gate bipolar transistor (IGBT) developed by Suzuki. It is capable of high frequency and high-efficiency operation due to its built-in snubber circuit, low on-state resistance, and high Collector-Emitter breakdown voltage. The IKD04N60RAATMA1 IGBT transistor is suitable for switching and pulsed applications requiring up to 600V.This product has a class of 8J at 100A and has a total Anode-Emitter junction capacitance of 2525pF. Additionally, its maximum Gate-Emitter voltage is 20V and its Collector-Emitter saturation voltage is 3V.The IKD04N60RAATMA1 IGBT transistor is used in a variety of industrial and electrical applications. These include motor control, DC/DC power conversion, UPS systems, AC/DC power supply, voltage source inverters, and switching applications. It is also used in various high frequency applications such as brushless DC motors, pulse transformers, and lighting systems. The IKD04N60RAATMA1 IGBT transistor is a three-terminal semiconductor device. Its Collector is connected to the gate and the Base is connected to the Anode. Its structure has thin layers of silicon with a thin insulating layer (oxide layer) between the thin layers. The IKD04N60RAATMA1 IGBT transistor works in the same way as a bipolar transistor (BJT) but has an insulated gate. An electric field is created between the Collector and the Gate, which widens or narrows the space between the Collector and the Gate. This electric field controls the current flow through the transistor. The Gate is then used to control the power of the current applied to the transistor. When a positive gate voltage is applied, the current flow between the Collector and the Anode is increased. This is known as the on-state. When the gate voltage is decreased, the current flow decreases and this is known as the off-state.When the IKD04N60RAATMA1 IGBT transistor is used in switching and pulsing applications, a snubber circuit is used to reduce the voltage spike that is created when the current flow is switched off. This is known as the turn-off spike.The IKD04N60RAATMA1 IGBT transistor is a reliable, efficient, and versatile transistor that is used in a variety of applications. It offers high-frequency, high-conversion efficiency operation with a low on-state resistance and a high Collector-Emitter breakdown voltage. Additionally, its integrated snubber circuit helps protect against voltage spikes caused by switching and pulsing applications.
The specific data is subject to PDF, and the above content is for reference
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