IKD06N60R Discrete Semiconductor Products |
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Allicdata Part #: | IKD06N60RINTR-ND |
Manufacturer Part#: |
IKD06N60R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 12A 100W TO252-3 |
More Detail: | IGBT Trench 600V 12A 100W Surface Mount PG-TO252-3 |
DataSheet: | IKD06N60R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchStop® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 12A |
Current - Collector Pulsed (Icm): | 18A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 6A |
Power - Max: | 100W |
Switching Energy: | 330µJ |
Input Type: | Standard |
Gate Charge: | 48nC |
Td (on/off) @ 25°C: | 12ns/127ns |
Test Condition: | 400V, 6A, 23 Ohm, 15V |
Reverse Recovery Time (trr): | 68ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Base Part Number: | *KD06N60 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IKD06N60R is one of the leading components of Transistors - IGBTs - Single category. This special type of transistor can be used for a variety of purposes due to its wide range of applications. The IKD06N60R is particularly useful in electrical circuits dealing with high-powered high-current applications, such as motor drivers and power supplies.
The IKD06N60R has one of the highest power ratings of any transistor in the Transistors - IGBTs - Single category. It can handle up to 600V in voltage and up to 6A in current. It also offers excellent temperature performance, making it suitable for use in a variety of environments. The IKD06N60R has an RDS (on) of 0.4 Ohm and a PD of 5W.
In terms of construction, the IKD06N60R is composed of a silicon wafer surrounded by a variety of barrier layers. These barrier layers are insulated from each other and act as a resistor, preventing the current flowing through the transistor from leaking away into the environment. This ensures the necessary safety of the device and facilitates its maximum performance.
As with all transistors, the IKD06N60R relies on the transfer of electrons through the barrier layers in order to achieve its desired effect. This is accomplished by applying a small signal (usually a current) to one of the three leads on the device. As the signal is increased, more and more electrons will be transferred through the barriers and eventually, a large enough signal will cause the application of current to occur. This current can then be used to power an electrical circuit in order to achieve a desired effect.
The IKD06N60R is a particularly reliable and efficient device due to its wide range of applications. It is well-suited for use in motor drivers and power supplies as it is capable of handling large amounts of current without sacrificing performance. Additionally, it can be used in a variety of other applications, such as switches, logic circuits and power amplifiers.
In summary, the IKD06N60R is an excellent choice for a wide range of applications due to its high power rating, temperature performance and reliable construction. Its ability to transfer current through its barrier layers makes it an ideal device for use in many types of high-powered, high-current applications. For this reason, the IKD06N60R is one of the most popular components in the Transistors - IGBTs - Single category.
The specific data is subject to PDF, and the above content is for reference
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