IKD04N60RFATMA1 Discrete Semiconductor Products

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• IKD04N60RFATMA1 Application Field and Working Principle
• • Transistors - IGBTs - Single
    • Application Field

      The IKD04N60RFATMA1 is a600 V N-channel enhancement mode field-stopped trench (FST) IGBT, featuring the Motion SIC® structure, which ensures better efficiency, ruggedness and higher switching speeds as compared to conventional trench IGBTs. The low conduction losses, high blocking ability and excellent power cycles characteristics make it ideal for high frequency bridge and motor control switching applications.

      In addition, the IKD04N60RFATMA1 has extremely high levels of avalanche energy ratings and excellent field-stop characteristics, adding up to improved device reliability and robustness. Its low gate charge characteristics and extremely low thermal resistance enable high reliability for high frequency switching with improved power device efficiency.

    • Working Principle

      The IKD04N60RFATMA1 is an N-channel field-stopped trench (FST) IGBT. It consists of two interconnecting JFETs and two MOS transistors connected in a dual-gate configuration. The first FET forms the N-channel JFET, while the second one forms the MOS transistor. The two FETs are arranged so that the N-channel JFET can be driven asymmetrically, thus allowing operation in either enhancement or depletion mode. In addition, the dual-gate structure eliminates the need for a body diode.

      The IKD04N60RFATMA1 is also equipped with a timing circuit, which enables the device to be driven at high frequencies. This circuit turns on and off the FETs as needed in order to reduce the current drain. The Motion SIC® structure also ensures improved switching speeds with low conduction and switching losses, allowing for higher power device efficiency.

      The device also features an internal temperature protection system, which prevents the device from overheating by automatically reducing its power dissipation at high junction temperatures. The FST structure of the IKD04N60RFATMA1 also provides excellent ruggedness, allowing the device to withstand higher voltage and current stress as compared to conventional trench IGBTs.

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