Allicdata Part #: | IKD06N60RFAATMA1-ND |
Manufacturer Part#: |
IKD06N60RFAATMA1 |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 12A 100W PG-TO252-3 |
More Detail: | IGBT Trench 600V 12A 100W Surface Mount PG-TO252-3 |
DataSheet: | IKD06N60RFAATMA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
2500 +: | $ 0.44866 |
Power - Max: | 100W |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 48ns |
Test Condition: | 400V, 6A, 23 Ohm, 15V |
Td (on/off) @ 25°C: | 8ns/105ns |
Gate Charge: | 48nC |
Input Type: | Standard |
Switching Energy: | 90µJ (on), 90µJ (off) |
Series: | Automotive, AEC-Q101, TrenchStop™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 6A |
Current - Collector Pulsed (Icm): | 18A |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKD06N60RFAATMA1 is part of a family of IGBTs (Insulated Gate Bipolar Transistors) that are designed and constructed to offer superior performance and reliability in systems that require high switching speeds, low forward voltage drops and low on-state conduction losses. Single IGBTs are typically used in power management, telecommunication, industrial control and control switching applications.
The IKD06N60RFAATMA1 is a single IGBT with a wide voltage range and a current capacity of 800A. It features a low on-state voltage drop of less than 1.1V and a low on-state conduction loss that are essential for high efficiency and long operation life. Additionally, the IKD06N60RFAATMA1 has a fast switching speed, making it ideal for high frequency circuits such as those in motor control and power management. The IKD06N60RFAATMA1 is also suitable for providing fast shut down times in UPS systems.
The IKD06N60RFAATMA1 has a well-known working principle. It consists of two distinct parts: an emitter which is the negative side of the transistor and a collector which is the positive side. When a suitable electrical signal is applied to the base of the transistor, it turns on the emitter-collector current, resulting in a flow of current across the two elements. This process is the basic action of an IGBT.
The IKD06N60RFAATMA1 uses the carrier injection principle. When the IGBT is forward biased, the carriers are injected from the emitter into the base layer, thereby creating a built-in potential between the emitter and the collector. This ensures that the collector charges quickly and the current flows easily as long as the gate voltage is maintained. When the gate voltage is removed, the carrier injection stops, the collector charges decrease and the current stops flowing.
The IKD06N60RFAATMA1 has a wide range of applications. It is suitable for use in logic circuits, motor drive and control circuits, motor control systems, switching circuits, and power control circuits. It can also be used in audio amplifiers and voltage regulators. Additionally, the IKD06N60RFAATMA1 can be used in AC to DC converters, DC to DC converters, DC to AC inverters, high voltage switches and pulse generator circuits.
The IKD06N60RFAATMA1 offers superior performance and reliability, making it an ideal choice for use in a range of industrial and commercial applications. It has a fast switching speed and a low on-state conduction loss, which are essential for high-efficiency systems. Additionally, the IKD06N60RFAATMA1 has a wide voltage range and a large current capacity, which make it suitable for use in large power control systems and other high-power applications.
The specific data is subject to PDF, and the above content is for reference
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