IKD04N60RATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKD04N60RATMA1TR-ND |
Manufacturer Part#: |
IKD04N60RATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 8A TO252-3 |
More Detail: | IGBT Trench Field Stop 600V 8A 75W Surface Mount P... |
DataSheet: | IKD04N60RATMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Series: | TrenchStop™ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 8A |
Current - Collector Pulsed (Icm): | 12A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 4A |
Power - Max: | 75W |
Switching Energy: | 90µJ (on), 150µJ (off) |
Input Type: | Standard |
Gate Charge: | 27nC |
Td (on/off) @ 25°C: | 14ns/146ns |
Test Condition: | 400V, 4A, 43 Ohm, 15V |
Reverse Recovery Time (trr): | 43ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
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The IKD04N60RATMA1 is a popular transistor in the single IGBT family. This device is used when a high frequency switch is needed, as well as when a very low on-resistance is required. It is also used when a low power dissipation is required. It is commonly used in motor control applications, as well as other power switching applications.
The IKD04N60RATMA1 is an insulated-gate bipolar transistor (IGBT) that works by providing a fast turn-off and fast turn-on time to enable high frequency switching. It is a voltage‐controlled device that works in two modes: the active and off modes. When the device is in the active mode, it is capable of carrying large current with low losses. In the off mode, the device has a low current level. The device is also capable of providing a voltage controlled dipolar conduction in the active mode.
The IKD04N60RATMA1 has an on-resistance of only 600 mOhm, which makes it suitable for applications with high frequency switching, such as motor control applications. The device can be used at a wide variety of temperatures, ranging from -40C to 125C. Additionally, the device has a wide range of gate drive voltages, ranging from +5V to -20V.
The IKD04N60RATMA1 also has a wide range of drain-source breakdown voltages, ranging from 16V to 600V. This makes it suitable for a wide range of applications, such as in motor controllers and inverters. Additionally, the IKD04N60RATMA1 has a wide safe operating area, allowing it to be used in a variety of applications and environments.
Overall, the IKD04N60RATMA1 is a popular single IGBT device that can be used in a variety of applications, such as motor control applications, low on-resistance switching, and power switching. The device has a low on-resistance and fast switching times, making it useful for high-frequency switching. Additionally, the device is capable of operating over a wide range of temperatures and gate drive voltages, making it suitable for many power switching applications. The device also has a wide safe operating area, making it suitable for a variety of applications and environments.
The specific data is subject to PDF, and the above content is for reference
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