Allicdata Part #: | IKD03N60RFAATMA1-ND |
Manufacturer Part#: |
IKD03N60RFAATMA1 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 5A 53.6W TO252-3 |
More Detail: | IGBT Trench 600V 5A 53.6W Surface Mount PG-TO252-3 |
DataSheet: | IKD03N60RFAATMA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
2500 +: | $ 0.34442 |
Power - Max: | 53.6W |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 31ns |
Test Condition: | 400V, 2.5A, 68 Ohm, 15V |
Td (on/off) @ 25°C: | 10ns/128ns |
Gate Charge: | 17.1nC |
Input Type: | Standard |
Switching Energy: | 50µJ (on), 40µJ (off) |
Series: | Automotive, AEC-Q101, TrenchStop™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 2.5A |
Current - Collector Pulsed (Icm): | 7.5A |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKD03N60RFAATMA1 is a commonly used Insulated Gate Bipolar Transistor (IGBT). IGBTs are semiconductors used in power electronics switches, which allow the switching and modulation of electrical current. IKD03N60RFAATMA1 IGBTs, specifically, are single IGBT switch components. This type of switch is part of an IGBT\'s conduction path, and provides an isolated on/off switching action in a bidirectional circuit.
The main application field for IKD03N60RFAATMA1 IGBTs is in high-frequency inverter applications, where it is necessary to switch the DC power source between two different AC frequencies. The IKD03N60RFAATMA1 can be used to switch from one AC frequency to another in a very fast and efficient manner, while ensuring a high degree of accuracy and stability. The IKD03N60RFAATMA1 can also be used in motor control applications, as it is capable of providing precise speed control and torque, as well as precise control over the electrical current.
The way that IKD03N60RFAATMA1 IGBTs work is by exploiting the high mobility of the electrons in silicon and the low on-state resistance of high-voltage IGBTs. When the gate voltage is applied, it creates an electric field which attracts the electrons. The electric field continues to increase until the electrons are all aligned along the gate oxide layer. This creates a high conduction path and enables a low on-state resistance.
The gate voltage can be applied either directly or indirectly, depending on the application. When direct gate voltage is used, the electrons in the IGBT\'s channel are universally attracted to the gate and the conductive path is formed. Using indirect gate voltage, the electrons are selectively attracted or repelled by a local charge, which modulates the current flow and allows for precise modulation of the current output and increased efficiency.
In addition, IKD03N60RFAATMA1 IGBTs are capable of providing very fast switching with short rise and short fall times, which makes them ideal for high-speed switching applications. The IGBTs also feature low forward voltage drop, high current carrying capacity, radiation-hardening capability and high temperature operation, making them well suited for use in a range of industrial and domestic applications.
In conclusion, the IKD03N60RFAATMA1 IGBTs are a reliable, efficient, and versatile single switch component. Their main application field is high-frequency inverter applications and motor control applications, and they are used to switch between different AC frequencies with very fast response time and precision. The IKD03N60RFAATMA1 IGBTs also feature low forward voltage drop, high current carrying capacity, and increased efficiency, making them a great choice for both industrial and domestic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IKD06N60RFATMA1 | Infineon Tec... | -- | 2500 | IGBT 600V 12A 100W PG-TO2... |
IKD06N60RAATMA2 | Infineon Tec... | -- | 1000 | IGBT 600V 12A 100W TO252-... |
IKD06N60RFAATMA1 | Infineon Tec... | 0.49 $ | 1000 | IGBT 600V 12A 100W PG-TO2... |
IKD04N60RATMA1 | Infineon Tec... | -- | 1000 | IGBT 600V 8A TO252-3IGBT ... |
IKD03N60RFATMA1 | Infineon Tec... | 0.78 $ | 2460 | IGBT 600V 6.5A TO252-3IGB... |
IKD04N60RFATMA1 | Infineon Tec... | 0.36 $ | 1000 | IGBT TRENCH 600V 8A TO252... |
IKD03N60RF | Infineon Tec... | 0.95 $ | 2299 | IGBT 600V 5A 53.6W TO252-... |
IKD06N60RATMA1 | Infineon Tec... | 0.41 $ | 1000 | IGBT 600V 12A TO252-3IGBT... |
IKD06N60RAATMA1 | Infineon Tec... | -- | 1000 | IGBT 600V 12A TO252-3IGBT... |
IKD03N60RFAATMA1 | Infineon Tec... | 0.39 $ | 1000 | IGBT 600V 5A 53.6W TO252-... |
IKD04N60RAATMA1 | Infineon Tec... | 0.41 $ | 1000 | IGBT TRENCH 600V 8A TO252... |
IKD04N60RFAATMA1 | Infineon Tec... | 0.43 $ | 1000 | IGBT 600V 8A 75W TO252-3I... |
IKD04N60RF | Infineon Tec... | -- | 1000 | IGBT 600V 8A 75W TO252-3I... |
IKD04N60R | Infineon Tec... | -- | 1000 | IGBT 600V 8A 75W TO252-3I... |
IKD06N60R | Infineon Tec... | 0.0 $ | 1000 | IGBT 600V 12A 100W TO252-... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT