IKD03N60RFAATMA1 Allicdata Electronics
Allicdata Part #:

IKD03N60RFAATMA1-ND

Manufacturer Part#:

IKD03N60RFAATMA1

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 5A 53.6W TO252-3
More Detail: IGBT Trench 600V 5A 53.6W Surface Mount PG-TO252-3
DataSheet: IKD03N60RFAATMA1 datasheetIKD03N60RFAATMA1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2500 +: $ 0.34442
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Power - Max: 53.6W
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 31ns
Test Condition: 400V, 2.5A, 68 Ohm, 15V
Td (on/off) @ 25°C: 10ns/128ns
Gate Charge: 17.1nC
Input Type: Standard
Switching Energy: 50µJ (on), 40µJ (off)
Series: Automotive, AEC-Q101, TrenchStop™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Current - Collector Pulsed (Icm): 7.5A
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The IKD03N60RFAATMA1 is a commonly used Insulated Gate Bipolar Transistor (IGBT). IGBTs are semiconductors used in power electronics switches, which allow the switching and modulation of electrical current. IKD03N60RFAATMA1 IGBTs, specifically, are single IGBT switch components. This type of switch is part of an IGBT\'s conduction path, and provides an isolated on/off switching action in a bidirectional circuit.

The main application field for IKD03N60RFAATMA1 IGBTs is in high-frequency inverter applications, where it is necessary to switch the DC power source between two different AC frequencies. The IKD03N60RFAATMA1 can be used to switch from one AC frequency to another in a very fast and efficient manner, while ensuring a high degree of accuracy and stability. The IKD03N60RFAATMA1 can also be used in motor control applications, as it is capable of providing precise speed control and torque, as well as precise control over the electrical current.

The way that IKD03N60RFAATMA1 IGBTs work is by exploiting the high mobility of the electrons in silicon and the low on-state resistance of high-voltage IGBTs. When the gate voltage is applied, it creates an electric field which attracts the electrons. The electric field continues to increase until the electrons are all aligned along the gate oxide layer. This creates a high conduction path and enables a low on-state resistance.

The gate voltage can be applied either directly or indirectly, depending on the application. When direct gate voltage is used, the electrons in the IGBT\'s channel are universally attracted to the gate and the conductive path is formed. Using indirect gate voltage, the electrons are selectively attracted or repelled by a local charge, which modulates the current flow and allows for precise modulation of the current output and increased efficiency.

In addition, IKD03N60RFAATMA1 IGBTs are capable of providing very fast switching with short rise and short fall times, which makes them ideal for high-speed switching applications. The IGBTs also feature low forward voltage drop, high current carrying capacity, radiation-hardening capability and high temperature operation, making them well suited for use in a range of industrial and domestic applications.

In conclusion, the IKD03N60RFAATMA1 IGBTs are a reliable, efficient, and versatile single switch component. Their main application field is high-frequency inverter applications and motor control applications, and they are used to switch between different AC frequencies with very fast response time and precision. The IKD03N60RFAATMA1 IGBTs also feature low forward voltage drop, high current carrying capacity, and increased efficiency, making them a great choice for both industrial and domestic applications.

The specific data is subject to PDF, and the above content is for reference

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