IKD04N60R Discrete Semiconductor Products

IKD04N60R Application Field and Working Principle

The IKD04N60R is a Insulated Gate Bipolar Transistor (IGBT) device manufactured by Infineon Technologies. It is a single-packaged device containing three p-n-p layers insulated from each other to form two power switches. The IKD04N60R utilizes the low-emission advantages of the IGBT technology to provide superior current performance as compared to normal bipolar transistors. The device is suitable for a variety of DC and AC motor control, robotics, and other power management applications.

Device Features

• 600V Rated Collector-Emitter Breakdown Voltage
• 340A CONTINUOUS Collector-Emitter Current
• 3ns Switching Time
• 180ns rise/fall time
• Tensile strained Silicon on top
• Lead-free package (halogen-free according to JEDEC standard)

Application Field

The IKD04N60R has been designed to meet the requirements for high current and high power delivery applications. It is suitable for use in a variety of applications, including:

• Industrial Motor Control
• Robotics
• Power Management in Automotive
• Power Amplifiers in Home Appliances
• Switching Power Supplies
• Inverter-Based Power Supplies

Working Principle

The IKD04N60R is a Insulated Gate Bipolar Transistor (IGBT) device that utilizes the low-emission advantages of IGBT technology. IGBTs are optimized devices for high power applications and offer improved performance compared to typical bipolar transistors. The devices consists of four layers, which are insulated from each other, as illustrated in the following figure. The principle of operation is based on charge carriers (holes and electrons) flow in a channel between the emitter and the collector. The flow of charge carriers is regulated by the potential (voltage) difference between the gate, emitter, and the collector; when the gate voltage is controlling, the device is driven in an on-state. The IKD04N60R is designed to switch from the "off-state" to the "on-state" quickly, as illustrated in the figure below:

When the gate voltage exceeds the voltage at the emitter terminal, the device turns on. During conduction, the collector voltage is clamped at the emitter voltage and the current increase until it reaches the rated value. When the gate voltage is decreased, the device turns off and the current decreases until it reaches zero. This controllable flow of charge carriers allows the current or power to flow through the device depending on the voltage applied to the gate.

Conclusion

The IKD04N60R is a highly integrated Insulated Gate Bipolar Transistor (IGBT) device designed for power management applications. The device has a rated collector-emitter breakdown voltage of 600V, a continuous current capability of 340A, and a switching time of 3ns. The IKD04N60R provides superior current performance as compared to traditional bipolar transistors and is suitable for a variety of applications, including industrial motor control, robotics, power management in automotive, and more. The device utilizes the low-emission advantages of IGBT technology and works by controlling the flow of charge carriers (holes and electrons) in a channel between the emitter and the collector.