| Allicdata Part #: | IPA80R1K4CEXKSA2-ND |
| Manufacturer Part#: |
IPA80R1K4CEXKSA2 |
| Price: | $ 1.17 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET NCH 800V 3.9A TO220-3 |
| More Detail: | N-Channel 800V 3.9A (Tc) 31W (Tc) Through Hole PG-... |
| DataSheet: |  IPA80R1K4CEXKSA2 Datasheet/PDF |
| Quantity: | 918 |
| 1 +: | $ 1.06470 |
| 10 +: | $ 0.94437 |
| 100 +: | $ 0.74624 |
| 500 +: | $ 0.57871 |
| 1000 +: | $ 0.45687 |
Specifications
| Vgs(th) (Max) @ Id: | 3.9V @ 240µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | PG-TO220 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 31W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.9A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IPA80R1K4CEXKSA2 is a semiconductor component. It belongs to the group of transistors and is classified as a field-effect transistor, specifically a single metal oxide semiconductor field-effect transistor (MOSFET). The MOSFET is a three-terminal device that can be used to control the voltage and current flow between its two input terminals. The output terminal of the MOSFET is called the drain, while the two input terminals are referred to as the source and gate. The device works by using a voltage difference between the gate and the source terminals to create an electric field which modulates the conductivity of the channel between the source and the drain terminals.
The IPA80R1K4CEXKSA2 has a breakdown voltage of 800 volts and a maximum drain-source current of 1 ampere. It is typically used as a switch in power applications such as power sources, UPS systems and consumer electronics. The device offers superior switching capability and low on-resistance. With its high peak blocking voltage, it is ideal for applications which require robust protection against power surges and spikes. It is also highly efficient, making it a great choice for applications that require minimal power losses.
The working principle of the device is based on the gate-source voltage and the drain-source voltage. When the gate-source voltage is applied, it forms a conductive channel between the source and the drain terminals, allowing current to pass. The gate is also used to control the voltage and current flowing through the device. The gate-source voltage must be kept below the threshold voltage for the desired current to be maintained. The drain-source voltage, on the other hand, must be kept below the breakdown voltage. If the voltage across the drain-source becomes too high, the device will shut off, preventing any further current from passing through it.
Overall, the IPA80R1K4CEXKSA2 is a highly efficient and robust device that is suitable for use in various types of power applications such as power sources, UPS systems and consumer electronics. With its high peak blocking voltage and low on-resistance, the device can provide superior protection against sudden surges and spikes. In addition, its ability to maintain a desired current flow with the help of a gate-source voltage is a great advantage. Its easy handling and high reliability make it a versatile component which can be used in many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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