
Allicdata Part #: | IPA80R650CEXKSA2-ND |
Manufacturer Part#: |
IPA80R650CEXKSA2 |
Price: | $ 1.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V TO-220-3 |
More Detail: | N-Channel 800V 8A (Ta) 33W (Tc) TO-220-3F |
DataSheet: | ![]() |
Quantity: | 1338 |
1 +: | $ 1.44900 |
10 +: | $ 1.30662 |
100 +: | $ 1.05015 |
500 +: | $ 0.81677 |
1000 +: | $ 0.67675 |
Vgs(th) (Max) @ Id: | 3.9V @ 470µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 5.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPA80R650CEXKSA2 is a logic level n-channel power MOSFET that can be used in a variety of applications. It is designed for use in high frequency and low power circuit designs where its low on-resistance enables maximum power efficiency. The device’s low gate input capacitance makes it suitable for high speed signal processing, and its highlyintegrated design simplifies that circuitry significantly.
The IPA80R650CEXKSA2 is a power MOSFET that can be used in a number of different applications, including switching and load management. Its low on-resistance makes it ideal for regulated power supply applications and its high input capacitance is ideal for high speed signal processing. It can also be used as a power amplifier in audio applications, as it provides low distortion and high power output.
The working principle of the IPA80R650CEXKSA2 is relatively simple and straightforward. When voltage is applied to its gate terminal, it will serve as an electrode to draw a current between the drain and the source. This, in turn, forms an electric field due to the voltage difference between the drain and source electrodes. This electric field is then used to control the flow of current through the channel, creating a high impedance drain to source path.
In addition to its use as a power amplifier and as a switching device, the IPA80R650CEXKSA2 can also be used as a load management device. Its low on-resistance and high input capacitance enable it to be used as a buffer between a high impedance source and a low impedance load. This ensures smooth and consistent power supply to the load while minimizing power losses due to heat dissipation.
In summary, the IPA80R650CEXKSA2 is a power MOSFET that can be used in a variety of applications. Its low on-resistance and high input capacitance enable it to be used for switching and load management, as well as for power amplifying in audio applications. Its highly integrated design simplifies circuitry, enabling quicker and easier circuit designs. In addition, its logic level n-channel design and highly integrated design makes it extremely reliable, ensuring that it will be able to handle whatever tasks it needs to do with minimal performance losses.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPA80R1K2P7XKSA1 | Infineon Tec... | 1.11 $ | 480 | MOSFET N-CH 800V 4.5A TO2... |
IPA80R650CEXKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V TO-220-3... |
IPA80R310CEXKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V TO-220-3... |
IPA80R1K0CEXKSA2 | Infineon Tec... | 1.25 $ | 176 | MOSFET N-CH 800V TO-220-3... |
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