IPA80R280P7XKSA1

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The IPA80R280P7XKSA1 is a N-Channel Power MOSFET, or metal oxide semiconductor field effect transistor (MOSFET), which is a voltage-controlled device used to control a high-power electrical load. This device is suitable for applications such as horizontal deflection switching for CRT monitors/displays and DC-DC converters.

The IPA80R280P7XKSA1 has a Gate-Source voltage (VGS) of 20V and an on-state drain current of 28A; it is a low drain-source on-resistance (RDS on ) MOSFET with a low gate charge. To drive this MOSFET, the gate-source voltage should be greater than the threshold voltage. As this is a N-Channel MOSFET it\'s Gate needs to be driven by a negative voltage.

The working principle of the IPA80R280P7XKSA1 MOSFET relies on the formation of an inversion layer on the surface of the silicon substrate. This is created by the application of a positive gate voltage on the gate pin of MOSFET which causes the electrons from the source side of the substrate to be pushed inwards, creating a conducting channel between the source and drain. Current can then flow between the drain to the source. As the amplitude of the gate voltage is increased the resistance of the channel decreases and more current can flow.

The key advantage of using an IPA80R280P7XKSA1 MOSFET is it\'s high current and low resistance capability. This means that it is great for applications such as regulating high currents (up to 28A), controlling the speed of motors, controlling lights, and other high power loads. Its low gate charge also make it suitable as a switching device due to its low temperature rise, fast switching speed and less power loss.

The IPA80R280P7XKSA1 is an ideal choice for applications that require low power dissipation, high efficiency, and low noise operation. In addition, since the MOSFET is voltage-controlled, the application can be easily integrated into existing or new circuits. The MOSFET is also resistant to ESD (Electrostatic Discharge), ensuring reliability and robust performance.

In summary, the IPA80R280P7XKSA1 is a N-Channel Power MOSFET with a Gate-Source voltage (VGS) of 20V and an on-state drain current of 28A. It is suitable for applications such as horizontal deflection switching for CRT monitors/displays and DC-DC converters, and provides high current and low resistance capability while being resistant to ESD (Electrostatic Discharge) making it an ideal choice for low power dissipation and high efficiency operation.

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