IPA80R1K2P7XKSA1

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The IPA80R1K2P7XKSA1 is a type of single n-channel enhancement mode power Field-Effect Transistor (FET) often used in power management and signal switching applications. It was developed by International Rectifier, a manufacturer of power management semiconductors, in 2009. The IPA80R1K2P7XKSA1 is designed to deliver high current output in a power-efficient package that makes it suitable for a variety of applications.

The IPA80R1K2P7XKSA1 is an n-channel power MOSFET, which means it is a Field-Effect Transistor (FET) with its source and drain terminals connected to the substrate of an insulating layer. This type of FET is constructed with a three layer substrate, which increases its current carrying capability. The FET can handle up to 30A continuous and up to 50A peak. It is capable of switching up to 100V DC in a power package that is only half the size of traditional MOSFETs.

The working principle of an enhancement-mode MOSFET is based on the relationship between the gate-to-source voltage and the drain current. When a positive voltage is applied between the gate-to-source terminals, it modulates the channel between source and drain terminals to control the flow of electrons through the channel. This allows the device to act as an electronic switch or amplifier to control or amplify electrical signals by varying the amount of current allowed to flow through it.

The IPA80R1K2P7XKSA1 has a maximum drain-source voltage of 100V, which makes it suitable for use in a variety of applications such as in automotive, medical, aerospace, and power supply circuits. It is also well-suited for voltage regulating applications due to its low on-resistance, low gate threshold voltage, low gate-source capacitance, fast switching speed, and high peak current capability.

The IPA80R1K2P7XKSA1 can be used in high-side and low-side switching applications as well as for load switching, general-purpose switching, and power converters. It is also popular for use in bridge circuits, DC/DC converters, charging systems, and gate driver circuits due to its low on-resistance and high breakdown voltage. Furthermore, the device is rated and approved for use in hazardous locations, making it a suitable option for a variety of industrial applications.

Overall, the IPA80R1K2P7XKSA1 is an ideal choice when looking for a power-efficient and efficient MOSFET solution. Its unique design allows it to deliver high current, fast switching speed, and low gate-source capacitance in a compact package. This makes it suitable for a wide range of applications, such as voltage regulating, load switching, general-purpose switching, and power converters. Moreover, its rating and approval for use in hazardous locations make it an attractive option for a variety of industrial applications.

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