IPA80R310CEXKSA2 Allicdata Electronics
Allicdata Part #:

IPA80R310CEXKSA2-ND

Manufacturer Part#:

IPA80R310CEXKSA2

Price: $ 2.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V TO-220-3
More Detail: N-Channel 800V 16.7A (Tc) 35W (Tc) Through Hole PG...
DataSheet: IPA80R310CEXKSA2 datasheetIPA80R310CEXKSA2 Datasheet/PDF
Quantity: 564
1 +: $ 2.12310
10 +: $ 1.89504
100 +: $ 1.55415
500 +: $ 1.25847
1000 +: $ 1.06136
Stock 564Can Ship Immediately
$ 2.34
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220FP
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 310 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IPA80R310CEXKSA2 is a single N-channel enhancement mode vertical DMOS FET (Field Effect Transistor). It is manufactured by Infineon Technology, and commonly used in a variety of digital display applications. The device has high-current handling capabilities up to 9A, and low thermal resistance of 6mΩ @ 25°C. It has a minimum breakdown voltage of 55V and a maximum on-state resistance of 29mΩ @ 8A.

The principle of an FET is similar to that of a bipolar junction transistor (BJT). The FET has 4 pins, the drain, source, gate, and body. The source and drain are the main terminals of the FET, where current will flow when the device is activated. The gate terminal is used to control the flow of current between the source and drain. When a voltage is applied to the gate, it will generate an electric field within the device, which in turn changes the output characteristics of the device. The body or substrate is an insulated material between the gate and source/drain, which helps control the properties of the device.

IPA80R310CEXKSA2 is mainly used in digital displays. It can be used in LCD, LED, and other digital displays. It is a low-noise and high-speed device, which makes it ideal for switching applications. The device has a superior switching performance, with a low on-state resistance and a low threshold voltage of 1.5V.

In addition to digital displays, IPA80R310CEXKSA2 can also be used in other applications such as mobile phones, digital cameras, notebook computers, and other electronic components. It has excellent thermal performance, which makes it suitable for high-power applications. Additionally, it has a low gate threshold voltage, which means that it can be easily integrated into circuits.

IPA80R310CEXKSA2 is a reliable and efficient device that is widely used in a variety of digital display applications. It has superior switching performance and low thermal resistance, which makes it ideal for high-speed and high-power applications. The device has a low threshold voltage and a high-current handling capability, which makes it suitable for various applications requiring precise control.

The specific data is subject to PDF, and the above content is for reference

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