IPC302N08N3X2SA1

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The IPC302N08N3X2SA1 is a single N-channel enhancement-mode field effect transistor manufactured by Infineon Technologies. It belongs to Infineon’s OptiMOS family, which is designed to meet the needs of low on-state resistance, high power handling capability, and low gate charge.

IPC302N08N3X2SA1 has excellent characteristics for a wide range of applications. It is suitable for power management in personal computers and automotive systems. It can also be used in battery-powered devices such as portable phones, digital cameras, and tablets, as well as in high-power applications such as motor drives, motion control, and pulse-width modulation (PPM) control.

The IPC302N08N3X2SA1 is a 30V, 8A N-channel enhancement-mode field effect power MOSFET. It features a low on-state resistance (0.006 ohm max RDS(ON) per device) that enables it to offer extremely low conduction losses in circuits. It also has a total gate charge (Qg) of only 5.3nC that makes it suitable for high-frequency switching operations. Its highly reliable industries-standard lead-frame and surface mount packaging enables it to operate over an extended temperature range of up to 175°C. In addition, it features ESD protection for gate, drain, and source pins.

The working principle of IPC302N08N3X2SA1 is based on the classic MOS architecture. It utilizes a single N-channel enhancement-mode field effect transistor to allow electric current flow through. When voltage is applied to the gate, the transistor is turned on and the current begins to flow from the drain to the source. The transistor is turned off when the gate voltage drops below the turn-off threshold voltage. This allows for precise control of the current through the transistor and enables the device to be used for power conversion and switching applications.

In summary, the IPC302N08N3X2SA1 is a single N-channel enhancement-mode field effect transistor that is well suited for a wide range of applications. It features a low on-state resistance and a low gate charge, making it suitable for high-frequency switching operations. Its single MOS architecture enables it to be used for both power conversion and switching applications.

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