Allicdata Part #: | IPD220N06L3GBTMA1TR-ND |
Manufacturer Part#: |
IPD220N06L3GBTMA1 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 30A TO252-3 |
More Detail: | N-Channel 60V 30A (Tc) 36W (Tc) Surface Mount PG-T... |
DataSheet: | IPD220N06L3GBTMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.18216 |
Specifications
Vgs(th) (Max) @ Id: | 2.2V @ 11µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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IPD220N06L3GBTMA1 Application Field and Working PrincipleIntroductionIPD220N06L3GBTMA1 is a single 200V N-channel trench gate field effect transistor (FET) designed for automotive applications, such as high side switching, lighting modules, and DC-DC converters. It has a maximum drain current of 3A and a low specific on-resistance of 100mω. This FET also features a high breakdown voltage of 260V, a small package size and a low threshold voltage.Application FieldIPD220N06L3GBTMA1 is suitable for a wide range of automotive applications. It is widely used for high side switching, lighting modules, and DC-DC converters. It can also be used in motor control circuits and current sensors. This FET is also used in motor controllers and other automotive systems, such as electric vehicle (EV) chargers, keyless entry systems, displays, solar panels, and battery management systems.Working PrincipleAn FET is a voltage-controlled device. It consists of a channel that acts as a switch between two terminals. When a voltage is applied to the gate, it creates an electric field that attracts carriers from the source to the drain. This creates a conductive path between the two terminals and current flows through the channel.The IPD220N06L3GBTMA1 contains an N-type channel that is constructed by a series of doped regions. This FET has a low drain-source voltage (Vds) and low threshold voltage (Vth). The Vth is the minimum voltage required to turn on the FET. As the drain-source voltage increases, the drain current (Id) also increases.When the voltage applied to the gate is reversed, it creates an electric field that repels the carriers away from the source to the drain. This terminates the current flow and the FET operates in its cutoff mode.ConclusionIPD220N06L3GBTMA1 is a single 200V N-channel trench gate field effect transistor (FET) designed for automotive applications. It has low specific on-resistance of 100mω, a high breakdown voltage of 260V, a small package size and a low threshold voltage. This FET is suitable for a wide range of automotive applications, such as high side switching, lighting modules, DC-DC converters, motor controllers, and other automotive systems. The FET works by applying a voltage to the gate, creating an electric field that attracts carriers from the source to the drain, thus allowing current to flow. When the voltage applied to the gate is reversed, it creates an electric field that repels the carriers away from the source to the drain, terminating the current flow.The specific data is subject to PDF, and the above content is for reference
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