IPD250N06N3GBTMA1

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IPD250N06N3GBTMA1 is a field-effect transistor (FET) manufactured by Infineon Technologies, specifically a high voltage N-channel enhancement mode power MOSFET. It is suitable for applications such as high voltage switching, power converters, power factor correction, and motor control duties.

A field-effect transistor is an unipolar device, meaning that current flow is either predominantly n-type or p-type electrons. FETs come in several variations but all operate using the same concept. A FET has a source terminal, a drain terminal, and a gate terminal. Between these components is the semiconductor material, which is usually doped silicon. A varying electric field is used to vary the conductivity of the channel connecting the source and drain, allowing for current to flow between the two terminals. It is classified as depletion mode or enhancement mode, where the latter allows greater current flow with a lower voltage dropped across the semiconductor.

The IPD250N06N3GBTMA1 is an enhancement mode MOSFET measuring 17.7mm x 8.8mm, capable of switching powers up to 150V06A. It has an operating temperature range from -55°C to 175°C and is available in a TO-247 surface mounted package. Its Infineon\'s Stronghold Trench technology allows for reliable switching at high frequencies, with an internal gate resistance of only 11 mΩ. Its maximum gate threshold voltage is 4V, and its turn-on pollution under a 10V gate voltage is 1 mA.

In terms of performance, the IPD250N06N3GBTMA1 has both a maximum gate charge of 33nC and a gate time delay of 27 ns, making it capable of high-speed switching operations. Its input capacitance is just 550 pF at a gate voltage of 10V and its output capacitance is approximately 130 pF. Its body diode forward voltage is also suitable for operating at up to 100V. Its rugged construction makes it well-suited for industrial applications.

The IPD250N06N3GBTMA1 is a great choice for high-power applications that require reliable functionality at high frequencies. Its extremely low gate charge makes it suitable for a wide range of applications, from high-voltage switching, power converters, power factor correction, and motor control duties.

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