IPD25N06S4L30ATMA1

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The IPD25N06S4L30ATMA1 is a three-terminal low-voltage N-channel enhancement-mode MOSFET that operates from a single 2.8 V source, which is most commonly used in switch-mode power supplies, battery protection circuits, and logic level conversion, and is packaged in small 8-lead DPAK, 8-lead SOIC, and 8-lead TSSOP packages. This makes them well-suited for any application where space is a constraint but higher power performance is desired.

The IPD25N06S4L30ATMA1 consists of an N-Channel MOSFET with an integrated diode that helps to minimize switching losses and associated heat dissipation. It also has an input protection diode that prevents parasitic power supply fluctuations. The device provides high performance with its low input capacitance of 63.6 pF and low RDS (ON) of 9.89 mΩ. It has a long drain-source breakdown voltage of ≥75V, making it suitable for applications that require high voltage handling capabilities. The IPD25N06S4L30ATMA1 also features low-voltage logic level compatible gate drive, which makes it well-suited for logic-level converters and applications requiring a low VGS threshold gate drive.

The working principle of the IPD25N06S4L30ATMA1 is based on the basic theory of operation of a MOSFET. When a gate-source voltage is applied to the MOSFET, it becomes conductive and allows current to flow from its drain to its source. The drain-source voltage of the MOSFET affects the intensity of this flow; as the drain-source voltage increases, the current increases. This is known as linear operation. Conversely, as the drain-source voltage falls below the threshold voltage, the current through the MOSFET decreases. This is known as saturation operation.

The IPD25N06S4L30ATMA1 has a wide range of applications in areas such as switch-mode power supplies, battery protection circuits, logic level converters, power management circuits, and automotive electronics. For example, it can be used in switch-mode power supplies for high efficiency and low voltage operation, and to protect batteries from overcharging or over discharging. It can also be used to level-shift signals from low-voltage logic families to conventional CMOS logic levels. Furthermore, the device can be used in automotive power control circuits to provide improved system performance and greater throughput with lower voltage and lower power consumption.

In conclusion, the IPD25N06S4L30ATMA1 is a three-terminal low-voltage N-channel enhancement-mode MOSFET, featuring low-voltage logic level compatible gate drive and high performance. It is suitable for applications such as switch-mode power supplies, battery protection circuits, logic-level converters, power management circuits and automotive electronics.

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