IPD25N06S4L30ATMA2

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The IPD25N06S4L30ATMA2 is a single N-channel MOSFET with a max drain source voltage of 30V and a max drain current of 57A. It is commonly used in a variety of applications including power switching and signal amplification. This article will discuss the application fields and working principles of this MOSFET.

Applications

The IPD25N06S4L30ATMA2 is a versatile MOSFET, suitable for a wide range of applications. Some of its ideal applications include:

• Power switching applications such as AC/DC power conversion
• DC/DC power supplies
• Power amplification for radio signals, specifically for applications such as radio power amplifiers
• DC/AC converters for renewable energy applications
• Signal processing with heavy currents
• Audio amplifiers

Due to its excellent thermal characteristics, this MOSFET is also ideal for applications requiring extended power handling capability.

Working Principle of the IPD25N06S4L30ATMA2

The IPD25N06S4L30ATMA2 is an N-channel enhancement mode MOSFET, meaning that it is capable of blocking or conducting electrical current through its gate terminal. When the gate is left open, or unconnected to any potential, the MOSFET presents a high input impedance, preventing current from flowing through the channel. When a voltage is applied to the gate terminal, current is allowed to flow through the channel, creating a “conductive path” through which electrical current may be diverted.

At low gate voltages, the IPD25N06S4L30ATMA2 is said to be in its “linear region”, meaning that the MOSFET conducts a current with a linear relationship to its gate voltage. This is useful for amplifying signals and controlling currents precisely. At higher gate voltages, the MOSFET enters into its “saturation region”, meaning that the current through the drain and source terminals will remain relatively constant despite changes in gate voltage.

This MOSFET has an extremely low on-state resistance, allowing it to handle currents upwards of 57A. This makes it an ideal choice for power switching applications, combining high current capacity with extremely low RDSon.

Conclusion

The IPD25N06S4L30ATMA2 is a high-power MOSFET with a wide range of applications and excellent thermal characteristics. It is commonly used in power switching and signal amplification applications, due to its low on-state resistance, low drain to source capacitance, and its ability to enter into both linear and saturation regions of operation.

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