IPD25N06S240ATMA1 Allicdata Electronics
Allicdata Part #:

IPD25N06S240ATMA1TR-ND

Manufacturer Part#:

IPD25N06S240ATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 29A TO252-3
More Detail: N-Channel 55V 29A (Tc) 68W (Tc) Surface Mount PG-T...
DataSheet: IPD25N06S240ATMA1 datasheetIPD25N06S240ATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 26µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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IPD25N06S240ATMA1 is a type of MOSFET transistor, which stands for metal-oxide-semiconductor field-effect transistor. This type of transistor is used for switching electronic signals on and off and for this reason, it’s often used in applications that require high-speed cutting of signals. The IPD25N06S240ATMA1 has a maximum drain current of 24 amperes and a maximum drain-source voltage of 60 volts. It is available in a TO-220AB package.

Application Field

The IPD25N06S240ATMA1 MOSFET is typically used in any application that requires high-speed switching. It is often used in power supplies, amplifiers, and other power conversion circuits. For example, it can be used in an audio amplifier to amplify an electric guitar’s output, or to increase the power output of an amplifier. The MOSFET is also often used in controlling motors, such as those used in robots, toys, and RC cars.

Furthermore, the IPD25N06S240ATMA1 is used in applications where the switching speed needs to be high, such as in pulse power circuits or for controlling high-power electrical appliances. It is also used in low-power switching applications, such as in dimmer switches, LED lighting controllers, cameras, and more.

Working Principle

The IPD25N06S240ATMA1 MOSFET works on the principle of controlling current by using an electric field. The electric field is created by a voltage applied to the gate of the MOSFET. By applying a gate voltage, the electric field exists which pushes hydrogen atoms onto the silicon, creating a conductive channel between the source and the drain. This allows current to flow between the source and the drain, and the current varies with the magnitude of the gate voltage. By applying a negative gate voltage, the resistance of the channel will increase and the current will decrease.

The MOSFET also works on the principle of varying the output resistance by controlling the source-drain voltage. The higher the voltage applied to the source-drain, the lower the resistance will be, allowing more current to flow through the transistor. This is useful for applications such as motor control, where the resistance needs to be varied to change the speed of the motor.

The IPD25N06S240ATMA1 MOSFET is a high quality and reliable MOSFET, making it a popular choice for many applications. Its high drain current and drain-source voltage ratings, as well as its ability to switch high-power electric appliances, make it a versatile and useful transistor. Its wide range of applications includes everything from audio amplifiers to controlling robots and high-power switches.

The specific data is subject to PDF, and the above content is for reference

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