IPD25N06S240ATMA2 Allicdata Electronics
Allicdata Part #:

IPD25N06S240ATMA2-ND

Manufacturer Part#:

IPD25N06S240ATMA2

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 29A TO252-3
More Detail: N-Channel 55V 29A (Tc) 68W (Tc) Surface Mount PG-T...
DataSheet: IPD25N06S240ATMA2 datasheetIPD25N06S240ATMA2 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.19676
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 4V @ 26µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPD25N06S240ATMA2 is a kind of single stripe MOSFET and belongs to popular power MOSFETs product offering. It can be used for various applications like motor control, power distribution and load switching.

The IPD25N06S240ATMA2 MOSFET use planar strip technology and is composed of multiple chips.It has an easy implementation with excellent saturation characteristics and temperature stability. This device is also very suitable for dv/dt, di/dt and secondary breakdown applications.

The IPD25N06S240ATMA2 MOSFET is capable of cycling at high current and frequency, while being highly reliable and durable. It has a typical value of breakdown voltage of between 24 V and 75 V and a typical on-resistance of between 0.5 Q and 0.7 Q. It can also work under high temperature up to 175℃.

Application Field

This MOSFET can be used for various load switching, motor control and power distribution applications such as battery operated equipment, consumer electronic equipment and telecom related DC-DC conversions. Furthermore, it is also suitable for driving resistive and capacitive loads, such as lamps.

Working Principle

A MOSFET is an electronically controlled field-effect transistor that consists of three terminals; the gate, the source and the drain. The gate terminal is used to regulate the flow of electrons between its source and drain terminals. When a positive voltage is applied on its gate terminal, electrons are attracted and move through the gate terminal to the drain. This creates a conductive path between the drain and the source, thus allowing the current to flow between the two terminals. When the gate voltage is negatively charged, the flow of electrons is blocked, turning of the current source.

The IPD25N06S240ATMA2 is a MOSFET that uses a planar stripe technology that consists of multiple chips. This allows this MOSFET to have excellent saturation characteristics and temperature stability when compared to traditional MOSFETs. It is also very compatible with secondary breakdown applications.

In conclusion,IPD25N06S240ATMA2 is an improved single stripe MOSFET that can successfully used for load switching, motor control and power distribution applications like battery operated equipment, consumer electronics, and telecom related DC-DC conversions. Its excellent saturation behaviour and temperature stability make it an ideal choice for these application purposes.

The specific data is subject to PDF, and the above content is for reference

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