IPD25CN10NGATMA1

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IPD25CN10NGATMA1 is a N-channel enhancement mode MOSFET transistor (transistor is a semiconductor device used to amplify or switch electronic signals and electrical power). This specific MOSFET model belongs to the single MOSFET family and has a high current (up to 75A) and the voltage can be up to 25 volts. This type of MOSFET transistor is advantageous because of its low on-resistance and good power-delay options. This type of transistor is suitable for many applications, including consumer devices, automotive applications, high-power switching, and power management.

The IPD25CN10NGATMA1 MOSFET transistor has many characteristics that make it suitable for various applications. Its drain-source voltage (VDS) is 25 volts, and its drain current (ID) is 75 amps. Its gate source voltage (VGS) is 20 volts, and its gate threshold voltage (Vth) is 2.5 volts, which makes it particularly suitable for high-speed switches and vehicle electronic systems.

The IPD25CN10NGATMA1 also has a low resistance, which makes it ideal for high-powered applications. The low resistance of this MOSFET transistor allows it to carry large currents while dissipating less heat, making it suitable for high power applications. Its low capacitance also makes it suitable for high-speed switching applications. Its high-breakdown voltage ensures that it can be used under high voltages.

The mode of operation of the IPD25CN10NGATMA1 is primarily determined by the voltage applied to its gate terminal, with respect to its source terminal. When the voltage applied to the gate is less than the threshold voltage, the transistor operates in the cut-off region, which means that the transistor does not allow current to flow from the drain to the source. When the voltage applied to the gate crosses the threshold voltage, the transistor shifts from the cut-off region to the linear region, allowing a small current to flow from the drain to the source. When the gate voltage is greater than the threshold voltage, the transistor further shifts to the saturation region, in which the transistor is fully “on” and allows maximum current to flow from the drain to the source.

The IPD25CN10NGATMA1 MOSFET transistor is suitable for various applications because of its characteristics, such as its high current, low resistance, low capacitance, and high-breakdown voltage. This makes it suitable for high-powered applications and high-speed switching applications. It is used in many consumer devices and automotive applications, as well as in power management applications.

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