
Allicdata Part #: | IPI50N10S3L16AKSA1-ND |
Manufacturer Part#: |
IPI50N10S3L16AKSA1 |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 50A TO262-3 |
More Detail: | N-Channel 100V 50A (Tc) 100W (Tc) Through Hole PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 0.64053 |
Vgs(th) (Max) @ Id: | 2.4V @ 60µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 15.7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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An IPI50N10S3L16AKSA1 is an insulated gate bipolar transistor (IGBT) module. The package of the IPI50N10S3L16AKSA1 is composed of a single IGBT chip with a built-in diode and a baseplate. This IGBT module is designed for use in applications where high power, fast switching speeds and low losses are of primary importance. The module is also commonly used for switching applications where fast switching times are needed. The module\'s design allows for excellent performance in both high-frequency and high-power applications.
A single IGBT chip is the main component of the IGBT module. It is composed of two layers of semiconductor materials: the P-region and the N-region. Each layer is further divided into two sections, the channel (the conducting region) and the guard ring (the isolating region). In the center of these two sections is the gate, which is used to control the current through the channel. The P-region layer is the positive layer and the N-region layer is the negative layer. The voltage applied to the gate allows for current to flow through the channel and along the P-region layer.
The module is designed to have low switching losses, high surge capability and excellent thermal dissipation properties. The IGBT module can reach switching speeds of up to thousands of volts per second, with a response time of nanoseconds. This makes it suitable for many applications, including pulse and high-frequency switching, power switching, AC motor control and high-powered motor control.
The IGBT module is also highly efficient and reliable. The module has ESD protection and built-in overcurrent and overvoltage protection features. This ensures that the module can function safely in extreme electrical conditions. The module also has very low gate capacitance, which helps it to achieve high-speed switching. This helps to make it ideal for high-frequency applications such as AC motor control.
The IPI50N10S3L16AKSA1 IGBT module is specifically designed for use in many industries and applications. It is ideal for use in consumer electronics, automotive applications, robotics, automation, industrial and medical systems. It is also suitable for use in consumer power supplies, such as those used in laptops, desktops and tablets. This makes the IPI50N10S3L16AKSA1 one of the most versatile and reliable IGBT modules available on the market today.
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