IPI50R350CPXKSA1

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The IPI50R350CPXKSA1 is a single N-channel 60V MOSFET transistor. It is a high density power MOSFET in a SO-8 package, which is optimised for battery driven applications. It is designed to help lower the on-state resistance of the transistor while providing higher performance than standard MOSFETs.

The IPI50R350CPXKSA1 has a wide range of applications due to its small size and excellent performance. It is suitable for many low power designs including battery charging circuits, power supply circuits, small signal switching circuits, audio circuits, digital I/O circuits and DC-DC converters. It is also suitable for use in a variety of high power designs such as server power supplies, power converters and automotive circuits.

The working principle of the IPI50R350CPXKSA1 is based on metal-oxide-semiconductor (MOS) technology. The transistor is composed of a metal gate and an insulated gate field-effect transistor (IGFET). The metal gate produces the gate voltage necessary to control the flow of current through the MOS channel. The gate voltage determines the on-state resistance of the transistor. The insulated gate field-effect transistor (IGFET) is responsible for blocking the source voltage from affecting the drain voltage.

The IPI50R350CPXKSA1 also has a PWM gate drive. This allows for fast switching speeds when used in conjunction with a PWM signal generator. The PWM switching frequency is determined by the gate charge and discharge times. It also has a temperature protection feature that can be enabled to limit the maximum junction temperature of the device.

The IPI50R350CPXKSA1 is a reliable, efficient and cost-effective single N-channel 60V MOSFET transistor. Its wide range of applications, excellent performance and low cost make it an ideal choice for many power and low-power designs. With its wide range of features and functions, it offers the user an efficient and reliable solution for their power or low-power design needs.

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