
Allicdata Part #: | IPI50N12S3L15AKSA1-ND |
Manufacturer Part#: |
IPI50N12S3L15AKSA1 |
Price: | $ 0.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CHANNEL_100+ |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 0.79243 |
Series: | * |
Part Status: | Active |
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IPI50N12S3L15AKSA1 is an insulated gate bipolar transistor (IGBT) manufactured by Infineon Technologies AG. It is part of the Insulated Gate Bipolar Transistor Family of products and is a single-die unit featuring exceptionally low gate charge losses, low saturation voltage, and high current capability. It is based on the company’s proprietary Field/Trench technology that allows minute adjustments of the transistor characteristics to meet extreme requirements of specific applications.
The IPI50N12S3L15AKSA1’s is specifically designed to be used in applications with high power and voltage requirements. It can operate efficiently in applications such as adjustable-speed motor drives, uninterruptible power supplies, and power supplies for consumer electronics. Due to its low gate drive losses, it is also ideal for applications with long-term voltage and/or current surges, ensuring reliable operation and power conversion.
The working principle of the IPI50N12S3L15AKSA1 is based on four major components: the base, gate, collector and emitter. When the base is connected to a voltage source, the internal voltage of the transistor imbalances the majority and minority carriers, allowing for the current to flow from collector to emitter, like a closed switch. The current flow from the collector to the emitter is determined by the voltage of the gate and is often referred to as the “gate threshold voltage”, or just the “threshold voltage”. By varying the voltage of the gate, the current flow can be controlled and the gain of the transistor can be adjusted.
In addition to its high-power, voltage, and current capabilities, the IPI50N12S3L15AKSA1 also provides outstanding surge immunity and temperature extremes. Its very low gate charge losses and superior saturation voltage capability make it an ideal choice for applications that require a high degree of power efficiency and reliability. Its small footprint and minimal cooling requirements make it an excellent choice for applications where space constraints or minimal energy consumption are important.
The IPI50N12S3L15AKSA1 is an excellent choice for anyone looking for an IGBT with outstanding power and current capabilities, surge immunity, and temperature extremes. With its cutting-edge technology, it is sure to provide reliable operation and power conversion in the toughest of applications.
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