IPI50R199CPXKSA1 Allicdata Electronics
Allicdata Part #:

IPI50R199CPXKSA1-ND

Manufacturer Part#:

IPI50R199CPXKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 17A TO262
More Detail: N-Channel 500V 17A (Tc) 139W (Tc) Through Hole PG-...
DataSheet: IPI50R199CPXKSA1 datasheetIPI50R199CPXKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 139W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Transistors are among the most important components in the electronics industry, and due to their diverse applications, they are found in nearly every electronic device. One of the most popular transistors is the IPI50R199CPXKSA1, which is used in a variety of applications. This article will discuss the application field and working principle of the IPI50R199CPXKSA1.

Application Field

The IPI50R199CPXKSA1 is a field-effect transistor (FET), most commonly used in linear and switching power supply applications. It has an ultra-low on-resistance of just 4 ohms, making it ideal for applications which require high efficiency and low power consumption. Additionally, its low capacitance allows for highspeed switching operation and low noise performance. This makes it suitable for a variety of applications including regulated power supplies, DC-DC converters, and various other power electronic devices. It is also used in low frequency signal amplification such as audio amplifiers and sound cards.

Working Principle

FETs are unipolar transistors, meaning that they rely on only one kind of charge carrier (electrons) to operate. The IPI50R199CPXKSA1 FET is a metal-oxide-semiconductor field-effect transistor. In operation, an input voltage is applied to the gate-source junction, which causes a voltage drop between the source and the drain. This drop causes electrons to flow from the source to the drain, thus creating a current. The magnitude of this current is determined by the input voltage and the resistance of the channel between the source and the drain. The resistance of the channel can be controlled by adjusting the voltage at the gate, making FETs excellent for amplification and switching applications.

The IPI50R199CPXKSA1 FET is particularly well suited for high speed switching applications due to its ultra-low on-resistance and low capacitance. This combination allows for fast switching times, and low noise operation. As such, the IPI50R199CPXKSA1 is an excellent choice for power supply and DC-DC converter applications which require high efficiency and low power consumption.

Conclusion

The IPI50R199CPXKSA1 is a popular field-effect transistor, which is used in a variety of applications. Thanks to its ultra-low on-resistance and low capacitance, it is particularly well suited for use in high speed switching and power supply applications. Additionally, its low noise operation makes it suitable for use in audio amplifier and sound card circuits. By understanding the application field and working principle of the IPI50R199CPXKSA1, designers and engineers can be sure that they select the best transistor for their specific application.

The specific data is subject to PDF, and the above content is for reference

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