IPI50R250CPXKSA1

The IPI50R250CPXKSA1 is a high voltage, N-channel, depletion-mode MOSFET, commonly used for high-power applications. This device has very low gate threshold voltage and superior switching speed, making it ideal for high-speed and low-power applications.

The IPI50R250CPXKSA1 is a single-gate device, meaning it consists of a single-gate electrostatic field-effect transistor (FET). It is a voltage-controlled device, meaning that its output is controlled by the applied voltage and not by the current. The input comprises of a gate and a source, while the output comprises of a drain and a body terminal. When the voltage applied to the gate is high, the device restricts current flow from the drain to the source; conversely, when the voltage is low, it allows current to pass through.

The IPI50R250CPXKSA1 features a low gate threshold of 5V and high maximum drain source breakdown voltage of 200V. It has an on-resistance (R_ds) of 250mΩ, a maximum drain source current of 7A, and a maximum junction temperature of 175°C. The device features a low gate capacitance of 6.8pF and is used in applications where fast switching speeds and low-power operation is required, such as LED lighting and audio amplifiers.

The IPI50R250CPXKSA1 is typically used in applications where its low drain source on-resistance and high peak switching current capabilities make it ideal, such as adjustable battery charging systems, motor-driver circuits and a wide range of consumer application switches. The device is well-suited to IGBT, PFC and other power electronics circuits, making it ideal for a wide range of industrial and automotive applications. Other applications include high-power switches, DC-DC converters and Class-D amplifiers.

The IPI50R250CPXKSA1 is a reliable and efficient N-channel MOSFET with low gate threshold, high maximum drain source breakdown voltage and superior switching speed.