
Allicdata Part #: | IPI50R350CP-ND |
Manufacturer Part#: |
IPI50R350CP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 550V 10A TO-262 |
More Detail: | N-Channel 550V 10A (Tc) 89W (Tc) Through Hole PG-T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 370µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPI50R350CP is an improved fast, ultra-low gate charge, low on-resistance, HEXFET power MOSFET from Vishay Siliconix. It utilizes advanced trench technology to provide excellent RDS(ON) characteristics and highly efficient performance through optimized gate charge options.
The IPI50R350CP is a non-punch through (NPT) device that uses a dual-channel, planar MOSFET process designed for automotive applications and other high current motor controls. This device has a positive temperature coefficient and a low input capacitance.
The IPI50R350CP is designed to provide superior performance and reliability in automotive, telecommunication, computers, and consumer audio applications. The low gate charge makes this device an ideal choice for applications requiring lower power consumption. It is also ideal for switching applications, lighting control, and battery management.
The input characteristics of the IPI50R350CP device are superior due to its unique features. The device features an ultra-low gate charge, extremely low on-resistance and very high dV/dt capability. The low gate charge ensures low conduction losses, and the high dV/dt ensures good noise immunity.
The IPI50R350CP device also offers superior efficiency and power dissipation. The device eliminates the need for external bootstrap diodes by incorporating an internal diode connection to provide protection from capacitor leakage current. Additionally, the device’s robust package ensures superior performance in high temperature, high voltage environments.
The IPI50R350CP is an ideal solution for applications operating in a wide range of temperatures and requires high power levels. Its low gate charge, low on-resistance, and high dV/dt make the IPI50R350CP ideal for automotive applications and other high current motor control applications. This device is also well suited for switching, lighting control, and battery management applications. The IPI50R350CP allows for greater design flexibility and improved system reliability in a cost effective package.
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