Allicdata Part #: | IPP200N15N3GHKSA1-ND |
Manufacturer Part#: |
IPP200N15N3GHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 50A TO220-3 |
More Detail: | N-Channel 150V 50A (Tc) 150W (Tc) Through Hole PG-... |
DataSheet: | IPP200N15N3GHKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 90µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1820pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPP200N15N3GHKSA1 is a power field-effect transistor (power MOSFET) designed for use in digital switching applications such as high-speed motor controls, home appliances, air conditioners, and digital displays. It is a type of Insulated Gate Bipolar Transistor (IGBT) also known as an insulated gate voltage-controlled transistor (IGVT). This type of transistor has become increasingly popular due to its high efficiency, fast switching speed, and cost-effectiveness in comparison to other types of power transistors.
The device provides a specification of 200V drain source breakdown voltage, 2A source drain current, and 15V drain gate voltage. It is made with a neutral gate structure, which allows both the p-type and n-type channels of the MOSFET to operate normally, providing a high efficiency and low voltage drop. This device also includes a surge current capability that allows it to handle short-term transient power spikes without sacrificing power efficiency or performance.
The working principle behind the IPP200N15N3GHKSA1 power MOSFET is based on the enhancement-type MOSFET, which has an insulated gate and a voltage-controlled channel between the source and the drain. When a positive voltage is applied to the gate, the channel between the source and drain becomes conductive, thus allowing current to flow from the source to the drain.When the voltage applied to the gate is lower than the threshold voltage of the device, then the channel is blocked, and no current can flow. One important feature of this device is that it can handle large amounts of both DC and AC power, making it an ideal choice for many digital switching applications.
The IPP200N15N3GHKSA1 power MOSFET is an ideal choice for many switching applications due to its high efficiency, fast response time, and low voltage drop. It is suitable for use in various industries including automotive, home appliance, and digital display. With its wide range of applications and its high performance, this power MOSFET can help manufacturers save time and money when building digital circuits.
The specific data is subject to PDF, and the above content is for reference
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