IPP26CN10NGHKSA1

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IPP26CN10NGHKSA1 Application Field and Working Principle

IPP26CN10NGHKSA1 is a single-channel N-channel MOSFET product, manufactured by Infineon Technologies, which is a worldwide leading supplier of discrete semiconductor circuits and electronic components. It can be used in a wide range of applications, from power conversion to analog and digital circuits. The product combines superior performance, reliability and low on-resistance in a highly integrated, temperature stable package.

Operation Principle

MOSFETs are four-terminal devices made from semiconductor materials such as silicon or gallium arsenide. The device consists of three terminals: the gate, source and drain. All of these terminals are made from one or several metal oxide semiconductor layers which form a sandwich-like structure. When the gate voltage is applied, a conductive channel is formed between the source and drain and an electric current flows through the channel. By varying the level of the gate voltage, the MOSFET can be switched on or off, thereby controlling the amount of current that flows through it. This makes the MOSFET a key component in many modern circuits and devices.

Data Sheet Characteristics

The data sheet of the IPP26CN10NGHKSA1 outlines its operating characteristics. The product offers a low on-resistance of 10 mΩ, a maximum ID rating of 11 A, a maximum 10 V VGS rating and a maximum 65 V VDS rating. The device comes in a SO-8 package and its drain current is rated at 2.3 A. The temperature range of the product is –55 to 150 C and the thermal resistance is 12.78 K/W. The product also has a maximum fall time of 115 ns, a maximum rise time of 95 ns and a maximum load of 3.5 A.

Applications

The IPP26CN10NGHKSA1 is suitable for a wide range of applications. It can be used for controlling power in DC-DC converters, in high-efficiency power conversion systems and in battery systems. The device is also suitable for using as an electronic switch in automotive and industrial applications. It is also used in high-side switch applications and in power management systems. The low on-resistance, high current capability, fast switching speed and extended temperature range make the device an ideal solution for a wide range of power switching applications.

Conclusion

The IPP26CN10NGHKSA1 is a high performance, single-channel N-channel MOSFET product, ideal for use in a wide range of applications. The product offers excellent performance, reliability and low on-resistance in a highly integrated, temperature stable package. The device is suitable for use in DC-DC converters, in high-efficiency power conversion systems, in battery systems and in high-side switch applications. With its fast switching speed and extended temperature range, the IPP26CN10NGHKSA1 makes an ideal solution for power switching applications.

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